SBIR/STTR PHASE I: Novel materials technology for high conductivity p-type AlGaN based on AlxGa(1-x)N / AlyGa(1-y)N superlattices

这个小企业创新研究第一阶段项目将通过构建AlGaN超晶格来开发高导电性p型AlGaN。p型AlGaN材料是许多光电器件和一些电子半导体器件的关键。含有p型AlGaN的半导体器件的许多特性（即功率效率、最大功率、噪声特性、最高工作温度、器件的加热和可靠性）取决于该层的电阻率。在本一期项目中，提出了一种低电阻p型AlGaN的新方法，即p型AlxGa1-xN / AlyGa1-yN超晶格。这种方法是基于利用由超晶格引起的电位变化和在AlGaN材料体系中发生的极化场。该项目的商业应用将在电子和光电子器件市场。这种器件的例子包括双极晶体管、激光器、led和光电探测器。

This Small Business Innovation Research Phase I project will develop a highly conductive p-type AlGaN by construction of AlGaN superlattices. The material p-type AlGaN is key to many optoelectronic and some electronic semiconductor devices. Many characteristics of semiconductor devices containing p-type AlGaN (that is, power efficiency, maximum power, noise properties, maximum operating temperature, heating of the device and reliability) depend on the resistivity of this layer. In this Phase I project, a novel approach for a low-resistivity p-type AlGaN is proposed, namely p-type AlxGa1-xN / AlyGa1-yN superlattices. This approach is based on exploiting potential variations induced by the superlattice and on the polarization fields occurring in the AlGaN material system. The commercial applications of this project will be in the market for electronics and optoelectronic devices. Examples of such devices include bipolar transistors, lasers, LEDs, and photodetectors.