NER: Understanding Thermal Transport in Nano-devices via Molecular Modification

这项工作的目的是描述在硅/二氧化硅接口代表的功率MOSFET器件的电子的热化。 界面的特征在于在一种情况下由氢钝化的硅键，而在另一种情况下没有氢。 实验表明，氢可提高器件性能，但氢的寿命有限。 因此，含氢设备的可靠性是不确定的。 通过建模和仿真，控制器件行为的物理过程将被检查。 分析将使用跟踪单个电子的蒙特卡罗技术进行。 散射将从问题中的重要散射体的横截面确定。 在这种情况下，硅和氢的横截面可以从文献中获得。然而，氢-硅键表示修改的声子分布。 这种分布已经通过实验测量，并且可以通过界面处的修改的横截面并入模拟中。 对物理过程的仔细描述将导致对 设备性能。 然后，参数研究可以导致增强的设备设计。

This work seeks to describe the thermalization of electrons at a silicon/silicon dioxide interface representative of a power MOSFET device. The interface is characterized in one case by hydrogen passivated silicon bonds, and in the other case without the hydrogen. It has been shown experimentally that the hydrogen improves device performance, but that the longevity of the hydrogen is limited. Therefore, the reliability of a device with hydrogen is uncertain. Through modeling and simulation, the physical processes governing the device behavior will be examined. The analysis will be performed using Monte Carlo techniques that follow single electrons. The scattering will be determined from cross-sections of the important scatterers in the problem. In the present case, the cross-sections for silicon and hydrogen can be obtained from the literature. However, the hydrogen-silicon bonds represent a modified phonon distribution. This distribution has been measured experimentally, and can be incorporated into the simulation through a modified cross-section at the interface. Careful description of the physical process will lead to an evaluation of device performance. Parametric studies can then lead to enhanced device designs.