SBIR Phase I: Low Cost Visible Blind Ultra Violet Photodetectors on Glass and Polyimide

这个小型企业创新研究（SBIR）第一阶段项目提出开发基于类似于氮化镓铝（GaN）的新型金属氧化物系统的创新可见盲紫外探测器。它基于宽带隙氧化物系统，该系统通过将两种主要氧化物化合物合金化来实现，表现出更宽且可调的带隙，产生能隙为3.3 eV至7.9 eV且具有高辐射硬度的半导体材料。该项目的研究人员已经为制造和应用可定制的带隙氧化物材料的概念申请了专利。该提案的目标是研究在玻璃、聚酰亚胺和硅等低成本衬底上生长宽带隙金属氧化物和紫外线探测器的可行性，以实现具有成本效益的产品的商业化。该技术可以扩展到生产大尺寸探测器阵列，并可以提高其可靠性。GaN探测器可用于的其他领域包括电信、化学传感和国土安全。

This Small Business Innovation Research (SBIR) Phase I project proposes to develop innovative visible blind UV detectors based on a novel metal-oxide system that is analogous to Gallium Aluminum Nitride (GaN). It is based on a wide band gap oxide system that is realized by alloying two primary oxide compounds, exhibiting a wider and tunable band gap, creating semiconductor materials which have energy gaps from 3.3 eV to 7.9 eV with high radiation hardness. The project investigator has already patented the concept of making and applying tailorable band gap oxide materials. The goal of this proposal is to study the feasibility of growing wide band gap metal-oxides and ultraviolet detectors on low cost substrates such as glass, polyimide, and silicon for commercialization of cost effective products. This technology can be extended to produce large format detector arrays and which can improve their reliability. Other areas where GaN detectors can be used are in telecommunications, chemical sensing, and homeland security.