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Modeling of Nanoscale MOSFETs

Modeling of Nanoscale MOSFETs
纳米级 MOSFET 建模
批准号:
0218008
负责人:
Dragica Vasileska
金额:
$23.99万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-10-01 至 2005-09-30

项目摘要

项目成果

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中文摘要
翻译
拟议的研究工作的目的是开发的方法whichallows模拟的效果发挥重要作用,在nano-scaledevices,现有的设备模拟器的框架内。其重要的基本机制一方面是量子效应如隧穿和量子化,另一方面是多体效应、电子-离子相互作用和单掺杂效应。该项目的目标是将这些影响纳入现有的模型和代码中,以便准确地表示它们对设备性能的影响,同时可以以与现有的基于粒子的设备模拟器相当的计算成本进行模拟。实现这一目标的基本方法包括使用新形式的有效量子势和现有基于粒子的方法的量子版本来模拟短程多体相互作用。比较将与实验数据提供的纳米结构研究小组在亚利桑那州立大学,英特尔和摩托罗拉。 校准的工具可以帮助器件设计者以更低的成本制造最佳的器件结构。该项目的教育工作将与拟议的研究活动密切相关。这将通过专门开发的跨学科课程在经典以及远程学习格式,并通过学生在研究生和本科生水平的研究项目的直接参与来完成。 课程材料将为此目的而开发,并将被放置在计算电子枢纽,这是正在开发的一个现有的NSF赞助项目的一部分。
英文摘要
The purpose of the proposed research effort is to develop methodology whichallows simulation of effects playing an important role in nano-scaledevices, within the framework of existing device simulators. The importantunderlying mechanisms are, on one hand, quantum effects such as tunnelingand quantization, and, on the other hand, many-body effects, electron-ioninteractions and single-dopant effects. The goal of the project is toinclude these effects into existing models and codes in such a way, thattheir influence on device performance is accurately represented, whilesimulations can be made at a computational cost comparable to that ofexisting particle-based device simulators. The basic approach to achievethis goal consists of the use of novel forms of effective quantum potentialsand quantum versions of existing particle-based approaches to simulateshort-range many-body interactions. Comparison will be made withexperimental data provided by the Nanostructures Research Group at ASU, andIntel and Motorola. The calibrated tools can help device designers infabricating optimal device structures with a reduced cost. The educationaleffort of this project will be closely tied to the proposed researchactivities. This will be accomplished via specially developedinterdisciplinary courses in a classical as well as a distance learningformat, and through the direct participation of students in the researchproject on the graduate as well as the undergraduate level. Coursematerials will be developed for this purpose and will be placed on theComputational Electronics Hub that is being developed as part of an existingNSF sponsored project.
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Collaborative Research: Solid-State Selenium Photo-multiplier with a High-K Dielectric Blocking Layer for High, Noise-free Avalanche Gain
  • 批准号:
    2048400
  • 项目类别:
    Standard Grant
  • 资助金额:
    $6.65万
  • 财政年份:
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  • 批准号:
    0901251
  • 项目类别:
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  • 资助金额:
    $30.62万
  • 财政年份:
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Collaborative Research: Quantum Simulator for Modeling Quantum Dot Photodetectors
  • 批准号:
    0701926
  • 项目类别:
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  • 资助金额:
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Modeling of P-Channel Si1-xGex MOSFET Devices and Silicon-On-Insulator (SOI) Device Structures
  • 批准号:
    0214867
  • 项目类别:
    Standard Grant
  • 资助金额:
    $18.0万
  • 财政年份:
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  • 负责人:
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海外基金