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GOALI: NanoEngineering of Magnetic Interfaces for SpinElectronics

GOALI: NanoEngineering of Magnetic Interfaces for SpinElectronics
GOALI:自旋电子学磁性界面纳米工程
批准号:
0300235
负责人:
Boris Sinkovic
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-05-15 至 2007-06-30

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中文摘要
翻译
自旋电子学正迅速成为21世纪世纪电子学的新前沿之一。这项新技术的中心主题是自旋相关传输。 目前的主要努力之一是开发用于高性能自旋电子器件的具有非常高(100%)程度的自旋极化的材料。 尽管最近在显示某些过渡金属氧化物和某些Hoysler合金确实表现出高度的自旋极化方面取得了重大进展,但在室温自旋电子器件如磁性隧道结(MTJ)中使用这种材料产生了令人失望的小效果。这些结果加强了这样的设备的性能是严重依赖于自旋极化的接口,而不是在这些material.Intellectual相的想法:我们建议推出一个集中的努力来理解和纳米工程的磁接口自旋电子学应用,虽然康涅狄格大学(UConn)和IBM之间的GOALI合作。 特别地,我们提出用自旋分辨光电子能谱技术直接测量费米能级上电子的自旋极化。 界面特性将通过在相关铁磁膜的顶部上生长超薄氧化物和其他隧穿势垒材料来获得,这将通过短的光电子逸出深度(在势垒厚度的量级上)来促进。 我们建议对主要由S. S. P. Parkin(IBM/Almaden)和Scott Chambers(PNNL)。自旋分辨实验将在康州大学的PI实验室以及国家同步加速器光源(NSLS)的U 5 UA光束线上进行。 PI在自旋分辨光电发射方面的专业知识与参与实验室在薄膜合成方面的专业知识相结合,将为拟议的任务提供独特的协同作用。该计划预计将作出重大贡献的理解和MTJ应用的最佳接口的纳米工程。PI和Co-PI(S. S. P. Parkin)之前的成功合作应该有助于GOALI项目中大学和工业合作伙伴之间的强有力的互动。更广泛的影响:该计划将通过提供有关相关磁性界面的自旋极化的宝贵信息,为新兴自旋电子技术的未来发展做出贡献。大学(UConn),行业(IBM)和国家实验室(PNNL和NSLS)之间的密切合作将为尖端技术研究生的教育和培训提供良好的环境。 特别是,与IBM的密切联系,虽然这个GOALI计划将为学生提供新的电子技术发展的第一手经验。外联活动将包括本科生参与通过NSF资助的康涅狄格大学REU项目支持的夏季研究项目。 现场实验室演示和教程将给予K-12学生团体在有组织的访问康州大学。当地的K-12科学教师已经参加了康州大学的研讨会。将提供有关拟议研究如何影响新技术发展的教程。
英文摘要
Spin electronics is quickly becoming one of the new frontiers of 21st century electronics. The central theme of this new technology is spin dependent transport. One of the major current efforts is the development of materials with very high (100%) degree of spin polarization for high performance spin-electronics devices. Although a significant progress has been recently made in showing that some transition metal oxides and some Hoysler alloys do exhibit a high degree of spin polarization, the use of such material in room temperature spin-electronics devices like magnetic tunneling junction (MTJ) have yielded disappointing small effects. These results have reinforced the idea that the performance of such devices is critically dependent on the spin-polarization at the interfaces rather than in the bulk phase of these materials.Intellectual merit: We propose to launch a concentrated effort to understand and to nanoengineer the magnetic interfaces for spin electronics application though a GOALI collaboration between University of Connecticut (UConn) and IBM. In particular we propose to directly measure the electron spin polarization of electrons at the Fermi level by spin resolved photoemission technique. The interface properties will be accessed by growth of ultra-thin oxide and other tunneling barrier materials on top of the relevant ferromagnetic films, which will be facilitated by short photoelectron escape depth, being on the order of the barrier thickness. We propose to lunch a systematic study of such structures fabricated mainly by S. S. P. Parkin (IBM/Almaden) and Scott Chambers (PNNL). The spin-resolved experiments will be performed PI's laboratory at UConn as well as at the U5UA beamline of the National Synchrotron Light Source (NSLS). Combination of PI's expertise in spin-resolved photoemission with the expertise of participating laboratory in films synthesis will provide unique synergy for the proposed task. The program is expected to make significant contribution to understanding and nanoengineering of optimum interfaces for MTJ application. Previous successful collaboration between PI and Co-PI (S.S.P. Parkin) should aid in strong interaction between the university and the industrial partner in this GOALI project.Broader impact: This program will contribute to the future progress of the emerging spin-electronic technology by providing invaluable information on the spin polarization at relevant magnetic interfaces. Close collaboration between the university (UConn), the industry (IBM) and the national labs (PNNL and NSLS) will provide an excellent setting for education and training of graduate students in cutting-edge technology. In particular, close ties with IBM though this GOALI initiative will provide students with first-hand experience on the development of novel electronic technologies . The outreach will include participation of undergraduate students in summer research projects supported through NSF-funded REU program at UConn. Live lab demonstrations and tutorials will be given to groups of K-12 students during organized visits to UConn. The local K-12 science teachers already participating in workshops at UConn. will be given tutorials of how the proposed research impacts the development of new technologies.
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会议论文
Spin- and Circular-Polarized Resonant Photoemission
  • 批准号:
    9896120
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    1997
  • 负责人:
    Boris Sinkovic
  • 依托单位:
Spin- and Circular-Polarized Resonant Photoemission
  • 批准号:
    9625340
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $20.0万
  • 财政年份:
    1996
  • 负责人:
    Boris Sinkovic
  • 依托单位:
海外基金