Performance Limits of SiGe Power Heterojunction Bipolar Transistors for Future Wireless System-on-a-Chip (SoC)

SiGe HBT技术的快速发展使得高频微波和毫米波电路在Si衬底上的集成前所未有。虽然SiGe HBTs与基于si的CMOS VLSI技术的集成对于未来的无线片上系统（SoC）很有希望，但由于缺乏高性能的SiGe大功率HBTs，基于si的高频微波发射机的片上集成仍然无法实现。因此，研究高频微波高功率SiGe hbt以克服现有挑战已成为使这些器件适合SoC集成的必要条件。提出的研究计划的具体目标是推进SiGe HBT制造技术，探索创新的SiGe HBT设计技术，并推进对SiGe HBT大功率工作机制的基本理解，目标是大幅延长SiGe HBT的功率放大频率。目标还包括基于物理的数值算法的发展，该算法可用于模拟基于SiGe HBTs垂直异质结构和布局的大信号功率特性。将研究活动与课程教学紧密结合，开设一门新的电气工程课程。提出了以下方法来完成研究计划。采用亚微米尺度，采用新颖的集电极设计和创新的降低寄生的加工技术，将大大提高大发射极面积功率SiGe hbt的最大振荡频率。本文将通过对大面积SiGe HBT内部传热和寄生特性的精确建模，研究一种新型的传热平衡HBT布局结构。SiGe HBT功率运行机制将通过分离小信号和大信号操作的热效应和寄生效应对功率增益退化的影响来暴露。通过研究SiGe HBT结构与模型参数之间的关系，并考虑单个功率SiGe HBT子单元的分区热效应，将开发基于物理的数值算法。通过演示SiGe HBT的处理、表征和建模，将在新的电气工程课程中提高学习效果。SiGe功率HBT性能限制的研究对微波固态器件和在L- ka波段微波频率下工作的各种无线系统具有重大影响。高频功率SiGe hbt的运行将产生替代许多关键电路和系统中相当一部分III-V有源器件的潜力。在这些电路和系统中，SiGe hbt将显著提高集成度、可靠性和成本节约。基于物理的算法的发展将促进SiGe功率HBT的开发，降低研发成本，并为功率放大器电路设计提供建模验证支持。SiGe HBT技术的最终进步可能会在完全基于si的高频系统上创造突破，并将对微波和固态器件社区做出重大贡献。此外，该突破可能最终为实现未来SoC无线通信铺平道路。研究与教学的整合将大大提高学生的学习效率，新课程将对威斯康星大学麦迪逊分校电气工程课程基础设施做出重大贡献。通过建设具有指导性的课程主页来传播研究成果，将使更广泛的社会群体受益。该提案的预算将主要用于支持研究生和本科生，重点是支持代表性不足的少数民族和女性学生。拟议的研究将在威斯康星大学麦迪逊分校的威斯康星应用微电子中心（WCAM）进行。用于迭代处理的晶圆将由劳伦斯半导体研究实验室（LSRL）种植。

0323717MaThe rapid advancement in SiGe HBT technology allowed unprecedented integration of high frequency microwave and millimeter wave circuits on Si substrates. While the integration of SiGe HBTs with Si-based CMOS VLSI technology is promising for future wireless system-on-a-chip (SoC), the on-chip integration of high-frequency Si-based microwave transmitters is still inaccessible, owing to the lack of high performance SiGe high-power HBTs up to date. Therefore, research on high-frequency microwave high-power SiGe HBTs to surmount the existing challenges has become necessary to make these devices suitable for SoC integration.The specific objectives of the proposed research plan are to advance SiGe HBT manufacturing technology, to explore innovative SiGe HBT design techniques, and to advance fundamental understanding of SiGe HBT high-power operations mechanisms, with the goal of substantially extending the power amplification frequency of SiGe HBTs. The objectives also include the development of physics-based numerical algorithms that can be used to simulate large-signal power characteristics based on the vertical heterostructure and layout of SiGe HBTs. A new electrical engineering course will be offered through tight integration of the proposed research activities and course instruction.The following approaches are proposed to accomplish the research plan. Submicron scaling, with novel collector design and innovative processing techniques for parasitics reduction, will be employed to dramatically enhance the maximum oscillation frequency of large emitter area power SiGe HBTs. A novel heat transfer-balanced HBT layout structure will be primarily investigated by accurate modeling of heat transfer and parasitics within large-area SiGe HBTs. The SiGe HBT power operation mechanisms will be exposed by separating the thermal effects and parasitic effects on power gain degradation for both small-signaland large-signal operations. Physics-based numerical algorithms will be developed by investigating the connections between SiGe HBT structure and model parameters with the consideration of partitioned thermal effects on a single power SiGe HBT subcell. Through demonstration of SiGe HBT processing, characterization and modeling, enhanced learning effectiveness will be achieved in the new electrical engineering course.The studies of SiGe power HBT performance limits have substantial impact on microwave solid-state devices and a variety of wireless systems that are operated in the microwave frequencies spanning L- to Ka-band. The operation of high-frequency power SiGe HBTs will yield the potential of replacement of a considerable portion of III-V active devices in many critical circuits and systems. Significantly increased integration level, reliability and cost saving will be achieved with SiGe HBTs in these circuits and systems. The development of physics-based algorithms will facilitate SiGe power HBT development, reduce R&D cost, and provide modeling verification support for power amplifier circuit design. The ultimate advancement of SiGe HBT technology may create a breakthrough on completely Si-based high-frequency systems and would represent a significant contribution to the microwave and solid-state device communities. Furthermore, the breakthrough may eventually pave the way to realizing future SoC wireless communications. The proposed integration of research and education will significantly enhance students learning effectiveness and the new course will be a significant contribution to the curriculum infrastructure of electrical engineering at University of Wisconsin-Madison. The dissemination of research results through the construction of an instructive course homepage will benefit a broader section of the society.The budget of the proposal will be primary used to support graduate and undergraduate students with emphasis on supporting underrepresented minority and woman students. The proposed research will be conducted at Wisconsin Center for Applied Microelectronics (WCAM), University of Wisconsin-Madison. Wafers for iterative processing will be grown by Lawrence Semiconductor Research Laboratory (LSRL).