U.S.-Brazil Cooperative Research: Study of the Electron-nuclear Spin Interaction in Semiconductor Systems: Towards Spintronic Memory Devices

在美国-巴西合作项目，由国际科学与工程办公室美洲项目资助，克利福德R。佛罗里达大学的Bowers将研究半导体系统中的电子-核自旋相互作用，并将其应用于自旋电子存储器件。 特别是，他将研究核自旋弛豫时间在抛物量子威尔斯井含有低维电子气。 相对于量子阱的平面倾斜的磁场的应用改变了电子光谱的方式，预计附近的Al，Ga或As核的自旋弛豫时间有显着的影响。 Bowers的巴西合作者Guennadii M.Gusev和Alain A.圣保罗大学的奎维博士将培育一种新型的结构--抛物量子阱，用于监测电子-核自旋相互作用。 Bowers将使用电子检测ESR和动态核极化光谱技术来表征这些半导体。 从这些研究中获得的见解可能对基于自旋电子学的设备的开发至关重要。 每个实验室的研究生将从另一个实验室学习新的实验技术，提供他们在家乡机构无法接受的培训。 该培训包括在高频和生长半导体材料中表征半导体器件的实践经验。

In this U.S.-Brazil collaborative project funded by the Americas Program of the Office of International Science and Engineering, Clifford R. Bowers of the University of Florida will study the electron-nuclear spin interaction in semiconductor systems with potential application to spintronic memory devices. In particular, he will study nuclear spin relaxation times in parabolic quantum wells containing a low dimensional electron gas. The application of a magnetic field tilted with respect to the plane of the quantum well alters the electronic spectrum in a way that is expected to have a marked impact on the spin relaxation time of nearby Al, Ga or As nuclei. Bowers' Brazilian collaborators, Guennadii M.Gusev and Alain A. Quivy of the University of Sao Paulo, will grow a novel type of structure, a parabolic quantum well, for monitoring the electron-nuclear spin interactions. Bowers will use electrically detected ESR and dynamic nuclear polarization spectroscopic techniques to characterize these semiconductors. Insights gained from these studies could be crucial for the development of spintronics-based devices. Graduate students from each laboratory will learn new experimental techniques from the other, providing training that they could not receive at their home institution. This training includes hands-on experience in characterizing semiconductor devices in high frequencies and growing semiconductor materials.