Novel Synthesis of Si/Ge-Based Magnetic Semiconductor Films and Heterostructures

该奖项的拟议活动侧重于探索高质量，有前途的Si/ ge基磁性半导体外延膜和异质结构的MBE合成。它旨在通过提高我们控制和定制半导体的电子和磁性能的能力来满足未来对电子材料的挑战，以用于在单个电子设备中制备和处理全电子状态，从而潜在地彻底改变电子和信息技术。利用两种或两种以上过渡金属元素的互补掺杂将被用作在高掺杂水平下稳定外延生长的策略，以实现高温铁磁性和定制电子结构。系统研究将采用组合方法。该提案是一个协作和跨学科的努力，基于磁性半导体的MBE合成的重大最新进展和专业知识，由NSF的持续支持成为可能。它涉及到与世界各地研究小组的积极合作。这项工作将培养各级学生在对我国未来科学和技术福祉至关重要的领域，特别是新材料的合成。电子技术未来的关键挑战是我们在硅基平台及其他平台上控制和定制半导体的电子和磁性能的能力。如果电子状态和磁性状态都能被制备、加工和集成到一个单一的设备或芯片中，它将彻底改变电子和信息技术。本研究旨在通过系统地探索硅基磁性材料的新合成方法和性能来应对这一挑战。将使用几种掺杂剂的互补掺杂来稳定和定制新材料，以获得所需的电子和磁性能。组合方法将使检验大量候选材料成为可能。该提案是一项协作和跨学科的努力，利用了以前NSF支持下的重大进展和专业知识。它将涉及与世界各地研究小组的积极合作。教育、合作和外联是拟议工作的主要特点。这项工作将在对我国未来科学和技术福祉至关重要的领域培养各级学生。

The proposed activities of this award focus on exploring MBE synthesis of high quality, promising Si/Ge-based magnetic semiconductor epitaxial films and heterostrucutres. It is aimed at meeting the future challenge to electronic materials by enhancing our ability to control and tailor both electronic and magnetic properties of semiconductors to be used for preparing and processing the full electronic states in a single electronic device, thus potentially revolutionizing the electronic and information technology. Complementary doping using two or more transition metal elements will be employed as the strategy to stabilize epitaxial growth at high doping levels in order to achieve high temperature ferromagnetism and to tailor electronic structures. Combinatorial approach will be employed for the systematic study. The proposal is a collaborative and interdisciplinary effort based on significant recent advances and expertise in MBE synthesis of magnetic semiconductors made possible by the continued NSF support. It involves active collaborations with research groups around the world. The work will train students at all levels in areas of critical importance to the future scientific and technological well-being of our country, particularly synthesis of novel materials.%%%The key future challenge to electronics technology is our ability to control and tailor both electronic and magnetic properties of semiconductors on the silicon-based platform and beyond. If both electronic and magnetic states can be prepared, processed, and integrated in a single device or chip, it would revolutionize the electronic and information technology. The proposed research is aimed at meeting the challenge by systematically exploring novel synthesis and properties of silicon-based magnetic materials. Complementary doping with several dopants will be used to stabilize and tailor the novel materials in order to achieve the desired electronic and magnetic properties. Combinatorial approach will make it possible for examining a large number of materials candidates. The proposal is a collaborative and interdisciplinary effort leveraged against significant advances and expertise made possible by the previous NSF support. It will involve active collaborations with research groups around the world. Education, collaboration and outreach are the key features of the proposed work. The work will train students at all levels in areas of critical importance to the future scientific and technological well-being of our country.