NIRT: Metal-Dielectric Interfaces at the Nanoscale for Quantum Information and Microwave Devices

NIRT：量子信息和微波设备纳米级的金属-介质界面将开发一个多学科计划，以了解金属-介质界面，并提高用于量子信息和微波设备的绝缘材料的质量。该项目将使用原位外延金属/电介质结构，以实现控制良好、干净的界面生长，并降低缺陷密度，以便对界面有一个基本的了解。这种方法的核心是基于超导的新工具，能够分析金属-介质结构中的微小损耗机制，以及先进的透射电子显微镜技术。这些方法的结合将允许在器件性能和原子结构之间建立直接关联，这将指向优化材料、界面和制造方法的最有效方法。该计划将以多种方式影响电子产品，使更复杂、更快和更安静的器件得以开发。在纳米尺度上理解材料的基本科学将为发明开辟全新的设备类别，其中一个例子是建造一台比现在的计算机强大得多的量子计算机。

NIRT: Metal-Dielectric Interfaces at the Nanoscale for Quantum Information and Microwave Devices AbstractA multidisciplinary program will be developed to understand the metal-dielectric interface and improve the quality of insulating materials for use in quantum information and microwave devices. The project will use in-situ epitaxial metal/dielectric structures that will enable the growth of well-controlled, clean interfaces with a reduced defect density to allow for a fundamental understanding of the interface. Central to the approach are new tools based on superconductivity capable of analyzing even minute loss mechanisms in metal-dielectric structures and advanced transmission electron microscopy techniques. The combination of these methods will allow the establishment of a direct correlation between device performance and atomic structure, which will point to the most efficient method for the optimization of materials, interfaces and fabrication methodsThis program will impact electronics in a number of ways, enabling the development of devices that are more complex, faster, and quieter. Understanding the basic science of materials at the nanoscale will open up for invention entirely new classes of devices, an example of which is the construction of a quantum computer that would be vastly more powerful than present day computers.