NIRT: Utilization of Ballistic Deflection Phenomena for Room Temperature Devices and Circuitry

这个NIRT提案的重点是室温下的非线性弹道输运。弹道输运通常被认为是量子物理制度的一个方面，并已在低温下进行了深入研究。然而，在室温下，细观结构中的某些弹道偏转效应是相当强大的。一个例子是“弹道整流器”。弹道偏转非线性可以用来构建其他器件和电路在室温下工作，这是非常不同于传统的电路。在本研究中，将制作、测试和分析弹道偏转装置和电路。同时，研究了非线性室温弹道输运的物理性质；此外，我们还将探讨基于介观弹道传输的电路所带来的不熟悉的要求和机遇所带来的建筑挑战。这个项目是一个理想的多学科方法，在物理、设备、电路和架构层面的研究被连接起来，以建立一个“弹道电子学”。智力优势：提出的研究是，非线性弹道输运在室温下，包括实验装置，如弹道整流器，仍然知之甚少。更广泛的影响：对教育、多样性和研究传播的具体倡议，纳入研究计划。该提案的技术重点是未来实际应用的现实领域-室温，低于100纳米的器件几何形状，诱导非线性传输的中等电压和高频。如果我们关于这四个问题的初步模型的预测得到证实，那么工作在太赫兹及以上的室温BDT电路，功耗要求非常低，将适用于多种应用。

Dr. Marc FeldmanECS 0609140This NIRT proposal focuses on nonlinear ballistic transport at room temperature. Ballistic transport is usually considered an aspect of the quantum physics regime, and has been studied intensively at cryogenic temperatures. Nevertheless certain ballistic deflection effects in mesostructures are quite robust at room temperature. An example is the "ballistic rectifier." The ballistic deflection nonlinearity can be used to construct other devices and circuitry operating at room temperature that are very different from conventional circuitry. In this research ballistic deflection devices and circuitry will be fabricated, tested, and analyzed. Simultaneously the physics of nonlinear room temperature ballistic transport will be investigated; and the architectural challenges presented by the unfamiliar requirements and opportunities of circuitry based upon mesoscopic ballistic transport will be explored. This project is ideal for a multidisciplinary approach, in that investigations at the physics, the device, the circuit, and the architectural level are joined to build a "ballistic electronics." Intellectual Merit: of the proposed research is that nonlinear ballistic transport at room temperature, including experimental devices such as the ballistic rectifier, remains poorly understood. Broader Impacts: of specific initiatives on education, on diversity, and on research dissemination, integrated into the research program. The technical focus of this proposal is a realistic area for future practical applications -- room temperature, sub-100 nm device geometry, moderate voltages inducing non-linear transport, and high frequencies. If the predictions of our preliminary model regarding these four issues are borne out, then room temperature BDT circuitry operating at a terahertz and beyond, with very low power requirement, will be suitable for a multitude of applications.