SBIR Phase I: Development of the First SiC PEBB

这个SBIR一期研究项目是开发和商业化第一个碳化硅单片集成电力电子构建块（PEBB）。提出的PEBB集成了一个垂直结栅场效应晶体管（VJFET）和一个结势垒肖特基二极管（JBS）在同一芯片上。这些创新包括一种与PEBB制造兼容的简单的完全自对准工艺，一种无需任何额外步骤即可将单片合并为单个JBS二极管的设计，一种允许通过完全自对准工艺制造具有亚微米垂直通道的故障安全常关VJFET的设计和工艺，该工艺只需要一个掩模来制造VJFET的有源部分，并且与PEBB集成兼容。以及适用于同步整流的PEBB设计，可大幅降低二极管导通损耗并提高电路效率。随着电力电子系统在最终消耗之前处理的电量迅速增加，提高这些系统的效率和可靠性可以节省大量的能源，并在未来几年带来深远的技术和社会效益。所提出的PEBB可应用于低至中功率应用，包括消费电子产品，工业电机控制，运输（混合动力电动汽车，插电式电动汽车）系统，军事和空间电力应用。

This SBIR Phase I research project is to develop and commercialize the first silicon carbide monolithically integrated Power Electronic Building Block (PEBB). The proposed PEBB integrates a Vertical Junction gate Field Effect Transistor (VJFET) and a Junction Barrier Schottky (JBS) diode on the same chip. The innovations include a simple fully self-aligned process compatible with the PEBB fabrication, a design that permits the monolithic merging into a single JBS diode by a process without any extra step, a design and process permitting the fabrication of the fail-safe normally-off VJFET with submicron vertical channel by a completely self-aligned process which requires only one mask for fabricating the active part of the VJFET and is compatible with the PEBB integration, and a PEBB design suitable for synchronous rectification that can substantially reduce diode conduction loss and improve circuit efficiency. With a quickly-increasing amount of the electric power being processed by power electronic systems before their final consumption, improvements on efficiency and reliability of these systems can save a substantial amount of energy and lead to profound technological and social benefits in the years to come. The proposed PEBB can be applied to low-to-medium power applications that cover consumer electronics, industrial motor control, transportation (Hybrid Electric Vehicles, Plug-in Electric Vehicles) systems, military and space power applications.