SGER: In Situ Growth of Active Copper and Copper Oxide Films on Borosilicate Glass for Electronic Applications

非技术描述：当今支持美国经济的一些关键竞争技术：电子、太阳能和环境修复使用铜或氧化铜薄膜，这些薄膜通常沉积在电气绝缘材料上。阿尔弗雷德大学的研究人员有一种原位生长这些薄膜的方法，可以绕过昂贵的沉积步骤。他们的研究伙伴罗切斯特理工学院(RIT)已经研究了初步的薄膜，以确定它们在微电子领域的潜力。这项建议的目的是确定这一变革性技术是否可以应用于薄膜对上述关键技术的要求，从而使器件更经济、更容易制造，从而更具竞争力。该项目将涉及两所大学的研究生和本科生，并将用于鼓励纽约西部贫困农村社区的高中生，特别是吸引女学生接受科学和工程方面的高等教育。技术细节：将确定通过三项关键技术适当的热处理在绝缘硼硅酸盐玻璃基板上原位生长铜、氧化亚铜和铜膜的条件。太阳能集热需要Cu2O连续膜，环境修复需要Cu2O和CuO连续膜，微电子芯片制作需要CuO和铜膜。后者需要RIT微电子制造设施的协作。如果这些薄膜在这些技术中的任何一种被证明是可行的，那么它将在技术上具有颠覆性，因为它将取代传统工艺中昂贵的、有时非常困难和耗时的沉积步骤。将对研究生和本科生进行大量使用尖端表征设备(由纽约州科学、技术和学术研究办公室慷慨提供)的培训。

NON-TECHNICAL DESCRIPTION: Some of the key competitive technologies of interest today for supporting the US economy: electronics, solar energy and environmental remediation use thin films of copper or copper oxide which are generally deposited on an electrically insulating material. Researchers at Alfred University have a way of growing these films in situ that circumvents the costly deposition steps. Preliminary films have been examined by their research partner, Rochester Institute of Technology (RIT), for their potential in microelectronics. The goal of this proposal is to determine whether this transformative technology can be applied to meet the requirement of the films for the key technologies mentioned above, thus making devices more economical, easy to manufacture and consequently more competitive. This project will involve graduate and undergraduate students from both universities and will be used to encourage high school students in the disadvantaged rural communities of western New York, in particular to attract women students into higher education in science and engineering.TECHNICAL DETAILS: The conditions for growing in situ cupric, cuprous oxide and copper films on an insulating borosilicate glass substrate by heat treatment appropriate to three key technologies will be determined. Cu2O continuous films are needed for solar collection, both Cu2O and CuO with high surface area for environmental remediation and both CuO and copper films for microelectronic chip fabrication. The latter requires the collaboration of RIT Microelectronics Fabrication Facilities. If these films prove viable in any of these technologies it will be disruptive technologically in that it will replace costly and sometimes very difficult and time-consuming deposition steps in the conventional process. Significant training of both graduate and undergraduate students with cutting edge characterization equipment (generously supplied by New York State Office of Science Technology and Academic Research) will be carried out.