High-Sensitivity Measurements of Interacting Disordered Quantum Hall Systems

技术这一个人研究人员奖支持一个研究半导体异质结构中相互作用的无序电子的项目。将开发无线电和微波频率范围的高频测量，以解决更标准的运输技术无法直接回答的一系列问题。研究的重点将是当两组朗道能级简并时，自旋/电荷相互作用如何影响电子的基态性质。利用具有两个子带的GaAs/AlGaAs量子阱中的电阻探测核磁共振和微波吸收光谱技术，将有助于这一研究。这项研究的另一个重点将是寻找高度关联电子的破对称磁态和自旋对偶态。高频光谱研究将在应变Si/SiGe异质结中进行。这些实验的预期结果可能会在高频电子学中得到应用。实践研究将包括微波工程和特性，将在微波电子学的重要技术领域为研究生和本科生提供出色的培训。非技术性：这一个人研究人员奖支持一个涉及先进半导体器件高频研究的实验研究项目。这些电子设备与高速电子和信息处理中广泛使用的设备非常相似。该项目的主要目标是了解一组新发现的电子性质，这些性质源于两个电子之间复杂的相互作用，这是由于一种称为电子自旋的电子性质。通过使用一系列非常规高频技术，将使获得这种理解的能力成为可能。这些实验的预期结果可能会对下一代半导体器件的发展产生更广泛的影响。例如，使用电子自旋通过存储器和逻辑功能进行信息处理的设备正在逐渐出现。在高频下测量和操纵电子自旋的能力可能成为这些新设备开发的重要部分。大量的动手研究将包括微波工程和特性，将为研究生和本科生提供微波电子学的优秀培训，这是一个对我们的社会具有重要经济意义的技术领域。

TechnicalThis individual investigator award supports a project to investigate interacting disordered electrons in semiconductor heterostructures. High-frequency measurements in radio and microwave frequency ranges will be developed to address a set of questions that cannot directly be answered by more standard transport techniques. An emphasis of the investigations will be on how spin/charge interactions can influence the ground state properties of electrons when two sets of Landau levels are brought into degeneracy. The study will be facilitated by using resistively detected nuclear magnetic resonance and microwave absorption spectroscopy techniques in a GaAs/AlGaAs quantum well with two occupied subbands. Another focus of the research will be on the search for broken-symmetry magnetic and spin-paring states of highly correlated electrons. High-frequency spectroscopy studies will be done in strained Si/SiGe heterostructures. The results anticipated from these experiments may have applications in high-frequency electronics. The hands-on research, which will include microwave engineering and characterizations, will give graduate and undergraduate students excellent training in the important technical area of microwave electronics.Nontechnical:This individual investigator award supports an experimental research project involving high-frequency studies of advanced semiconductor devices. These electronic devices are very similar to those widely used in high-speed electronics and in information processing. The main objective of the project is to understand a set of newly-discovered electronic properties stemming from the intricate interactions between two electrons due to a property of electrons called electron spin. The ability to gain such understanding will be made possible by using an array of unconventional high-frequency techniques. The results anticipated from these experiments may have broader impacts on the development of the next generation of semiconductor devices. For example, devices using electron spins to perform information processing via memory and logic functionality are gradually emerging. The capability to measure and manipulate electron spins at high frequencies may become an important part of the development of these new devices. The heavy hands-on research, which will include microwave engineering and characterizations, will give graduate and undergraduate students excellent training for microwave electronics, a technological area that is of great economic importance to our society.