GOALI: Side gated ultra narrow channel silicon MOSFETs and transport studies at nanometer scale

本研究的目的是对边门控小尺度场效应晶体管进行极低漏电流和静电调谐的实验评估，以及使用这些器件在纳米尺度上进行电子输运研究。该方法基于从衬底驱动的孔的积累，用于通道电位和侧界面的静电控制，而在顶栅界面形成反转层，用于电流流动。这种方法还通过多输入操作实现了额外的功能。将研究超小尺度和准一维结构中的电子输运。利用场效应晶体管的非线性特性和环境噪声进行高分辨率的电容电压表征。智力价值：通过该项目获得的知识将有助于理解小型设备和受限几何中的电子传输，这可能会导致逻辑和存储器的新设备概念。具有侧电荷捕获的可能性的非常窄的器件将使静电形成的纳米线和量子点中的输运的基础研究成为可能。更广泛的影响：这项研究将集中在一个有前途的替代结构的传统晶体管的某些应用。该项目将资助一名研究生。本科生也将参与器件的电气特性。研究结果将通过出版物和会议发言提供。该项目将被整合到工程学院正在进行的面向K-12学生和教师的推广项目中，以促进数学和科学教育。

Side Gated Ultra Narrow Channel Silicon MOSFETs and Transport Studies at Nanometer ScaleThe objective of this research is experimental evaluation of side-gated small scale field effect transistors for extremely low leakage currents and electrostatic tuning, and electronic transport studies at nanometer scale using these devices. The approach is based on accumulation of holes driven from the substrate for electrostatic control of the channel potential and side interfaces, while an inversion layer is formed at the top-gate interface for current flow. This approach also enables additional functionality through multi-input operation. Electronic transport in ultra-small scale and quasi-1D structures will be studied. High resolution capacitance-voltage characterization will be performed utilizing non-linear characteristics of field effect transistors and ambient noise.Intellectual merit: Knowledge gained through this project will contribute to the understanding of electronic transport in small scale devices and restricted geometries which may lead to new device concepts for logic and memory. Very narrow devices with the possibility of side charge trapping for further confinement will enable basic studies of transport in electrostatically formed nanowires and quantum dots. Broader impact: This research will focus on a promising alternative structure to conventional transistors for certain applications. One graduate student will be supported through the project. Undergraduate students will also be involved in the electrical characterization of the devices. The results will be made available through publications and conference presentations. The project will be integrated in ongoing outreach programs in the School of Engineering for K-12 students and teachers to promote math and science education.