Integration of Phase Change Devices with Silicon Electronics for Increased Functionality and Performance

相变器件与硅电子器件的集成，以提高功能和性能

• 批准号: 1711626
• 负责人: Ali Gokirmak
• 金额: $ 34.5万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2023-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1711626&HistoricalAwards=false
• 关键词: Integration; Phase; Change; Devices; Silicon

The electronics market is continuing to grow, as functionality of electronic circuits' increases for reduced cost, and the market expands into the developing world with mobile applications. The demand for overall computer and communication infrastructure is also increasing as a result. Electronics became a major driver of the global economy and increased quality of life with reduced device dimensions and integration of new materials and techniques. The recent advances in device technologies is enabling integration of large amount of high-speed data storage with logic circuits to construct computers on chip. If the memory access circuitry can be scaled down, the single-chip computer can significantly outperform the conventional computers in speed, power consumption, cost and size. One of the memory technologies that can enable integration of large data storage with logic circuits is phase change memory, which stores information in the highly resistive amorphous and conductive crystalline states of glassy materials as logic '1's and '0's. Phase change materials can also be used to make a family of multi-contact devices that complement conventional silicon electronics to reduce the area required for the logic circuits. The multi-contact phase change structures that are investigated in this study utilize thermal interactions in addition to electronic interactions to achieve the same or improved functionality at smaller area, reduced power and cost. The graduate and undergraduate students will be trained in device fabrication, characterization, simulations and modeling. The students involved with this project interact with industrial leaders to advance the field of phase change memory and will help transition this multi-contact phase change device technology to mass production. Minority students will be mentored through UConn Mentor Connection and Northeast Alliance program.This project focuses on fundamental studies on electro-thermal interactions and behavior of phase change materials that enable multi-contact logic devices, and design, fabrication and evaluation of these multi-contact devices as multiplexers, routers, counters, state machines and other logic units. These devices offer speeds comparable to DRAM (dynamic random access memory) and non-volatile configurations at sufficiently low power levels for critical feature sizes 50 nm. Pattern transfer technologies to achieve sub-50 nm critical features are now commonly available in silicon CMOS and some of the large-scale manufacturers have announced high density phase change memory products. Hence, the challenges related to integration of phase change memory with CMOS are practically resolved, and new device and circuit concepts that utilize this infrastructure can lead to significant impacts in a relatively short time. These multi-contact phase change devices can be manufactured along with conventional phase change memory arrays atop silicon CMOS to realize logic functions at a significantly reduced transistor count in the CMOS layer.

随着电子电路功能的增加和成本的降低，电子市场正在持续增长，并且市场通过移动应用扩展到发展中国家。因此，对整体计算机和通信基础设施的需求也在增加。电子产品已成为全球经济的主要驱动力，并通过减小设备尺寸以及集成新材料和技术来提高生活质量。设备技术的最新进展使得大量高速数据存储与逻辑电路的集成成为可能，从而构建片上计算机。如果存储器存取电路可以按比例缩小，单片计算机可以在速度、功耗、成本和尺寸方面显着优于传统计算机。能够实现大数据存储与逻辑电路集成的存储技术之一是相变存储器，它以玻璃材料的高电阻非晶态和导电晶态存储信息，如逻辑“1”和“0”。相变材料还可用于制造一系列多触点器件，以补充传统的硅电子器件，以减少逻辑电路所需的面积。本研究研究的多接触相变结构除了电子相互作用之外还利用热相互作用，以更小的面积、更低的功耗和成本实现相同或改进的功能。研究生和本科生将接受器件制造、表征、模拟和建模方面的培训。参与该项目的学生与行业领导者互动，推动相变存储器领域的发展，并将帮助将这种多触点相变器件技术过渡到大规模生产。少数族裔学生将通过康涅狄格大学导师连接和东北联盟项目获得指导。该项目侧重于电热相互作用和相变材料行为的基础研究，这些材料可实现多接触逻辑器件，以及这些多接触器件作为多路复用器、路由器、计数器、状态机和其他逻辑单元的设计、制造和评估。 这些器件提供与 DRAM（动态随机存取存储器）相当的速度和非易失性配置，且功耗水平足够低，可实现 50 nm 的关键特征尺寸。实现低于 50 nm 关键特性的图案转移技术现已普遍应用于硅 CMOS，一些大型制造商已推出高密度相变存储器产品。因此，与相变存储器与 CMOS 集成相关的挑战实际上已得到解决，并且利用该基础设施的新器件和电路概念可以在相对较短的时间内产生重大影响。这些多触点相变器件可以与硅 CMOS 顶部的传统相变存储器阵列一起制造，以显着减少 CMOS 层中的晶体管数量来实现逻辑功能。

项目成果

Stopping Resistance Drift in Phase Change Memory Cells

• DOI: 10.1109/drc50226.2020.9135147
• 发表时间: 2020-06
• 期刊: 2020 Device Research Conference (DRC)
• 作者: R. Khan;A. Talukder;F. Dirisaglik;A. Gokirmak;H. Silva

Phase‐Change Logic via Thermal Cross‐Talk for Computation in Memory

通过热交叉实现相变逻辑 - Talk for 内存计算

• DOI: 10.1002/pssr.202000422
• 发表时间: 2020
• 期刊: physica status solidi (RRL
• 作者: Kanan, Nadim;Khan, Raihan Sayeed;Woods, Zachary;Silva, Helena;Gokirmak, Ali
• 通讯作者: Gokirmak, Ali

Exploiting Lithography Limits for Hardware Security Applications

• DOI: 10.1109/nano46743.2019.8993902
• 发表时间: 2019-07
• 期刊: 2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO)
• 作者: R. Khan;H. Silva;Nafisa Noor;Chenglu Jin;Sadid Muneer;F. Dirisaglik;A. Cywar;Phuong Ha Nguyen;M. Van Dijk;A. Gokirmak

Computational analysis of multi-contact phase change device for toggle logic operations

• DOI: 10.1016/j.mssp.2021.106042
• 发表时间: 2021-11
• 期刊: Materials Science in Semiconductor Processing
• 影响因子: 4.1
• 作者: R. Khan;N. H. Kan'an;J. Scoggin;H. Silva;A. Gokirmak

Modeling Reset, Set, and Read Operations in Nanoscale Ge 2 Sb 2 Te 5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties

使用电场和温度相关材料属性对纳米级 Ge 2 Sb 2 Te 5 相变存储器件中的重置、设置和读取操作进行建模

• DOI: 10.1002/pssr.202200419
• 发表时间: 2023
• 期刊: physica status solidi (RRL
• 作者: Kashem, Md Tashfiq Bin;Scoggin, Jake;Woods, Zachary;Silva, Helena;Gokirmak, Ali
• 通讯作者: Gokirmak, Ali