SBIR Phase I: Potassium Lithium Niobate grown by Modified Laser Heated Pedestal Growth technique for blue and UV laser applications
SBIR Phase I: Potassium Lithium Niobate grown by Modified Laser Heated Pedestal Growth technique for blue and UV laser applications
批准号:
1013679
负责人:
Gisele Maxwell
金额:
$15.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-07-01 至 2010-12-31
中文摘要
这个小企业创新研究(SBIR)第一阶段项目将展示用于蓝色和紫外线激光应用的铌酸锂钾(KLN)倍频晶体的技术可行性。由非线性光学材料KLN组成的倍频晶体具有理想的性能,有可能提高蓝色和紫外激光器的性能并降低成本。然而,铌酸锂钾(KLN)晶体尚未进入商业主流,因为不可能通过传统技术(如Czochralski法)以所需的性能和成本可重复地生长它们。我们已经开发了一种基于激光加热基座生长(LHPG)技术的专有工艺,这将消除KLN晶体商业化的技术障碍。在本项目中,我们将在795纳米处确定非临界相匹配所需的KLN的精确组成,并根据所需的组成优化KLN晶体的质量,然后通过精确掺杂提高KLN晶体的透明度,使KLN晶体的转换效率最大化。第一阶段的技术目标是制造能够接收16瓦795纳米红外激光功率的KLN晶体,并产生2瓦397.5纳米激光功率。该项目的更广泛的影响/商业潜力将是倍频晶体的可用性,这将提高用于检查光罩的紫外激光器的性能,以及半导体工业中的图案化和非图案化晶圆。用于这些应用的检测系统市场已增长到每年200个系统,价值5亿美元。即将开发的KLN晶体将使激光制造商能够将更高功率,更坚固,更低成本的紫外激光器商业化,从而使半导体设备制造商能够开发改进的检测和计量系统。这些检测系统将使芯片制造商能够将下一代高性能集成电路商业化,并提高其产量。该项目将与领先的激光制造商Spectra-Physics密切合作,这将有助于测试所得晶体,使我们能够加速市场接受。
英文摘要
This Small Business Innovation Research (SBIR) Phase I project will demonstrate the technical feasibility of growing potassium lithium niobate (KLN) frequency doubling crystals for blue and ultraviolet (UV) laser applications. The incorporation of frequency-doubling crystals composed of KLN, a non-linear optical material with desirable properties, has the potential to improve the performance and reduce the cost of blue and UV lasers. However, potassium lithium niobate (KLN) crystals have not entered the commercial mainstream because it is impossible to grow them reproducibly, and with the required performance and cost, by conventional techniques such as the Czochralski method. We have developed a proprietary process based on the laser heated pedestal growth (LHPG) technique that will eliminate the technical barriers to commercializing KLN crystals. In this project, we will determine the precise composition of KLN required for non-critical phase matching at 795 nanometers, optimize the quality of KLN crystals with the required composition, and then maximize the conversion efficiency of KLN crystals by precise doping to increase their transparency. The Phase I technical goal is to create KLN crystals capable of receiving 16 watts of infrared laser power at 795 nm and generating 2 watts of laser power at 397.5 nm. The broader impact/commercial potential of this project will be the availability of frequency doubling crystals which will improve the performance of UV lasers for inspecting photomasks, and patterned and unpatterned wafers in the semiconductor industry. The market for inspection systems for these applications has grown to 200 systems per year and is valued at $500 million. The KLN crystals to be developed will enable laser manufacturers to commercialize higher-power, more robust, lower-cost UV lasers, in turn enabling semiconductor equipment manufacturers to develop improved inspection and metrology systems. These inspection systems will enable chip makers to commercialize future generations of higher-performance integrated circuits, and to increase their yields. This project will be undertaken in close collaboration with Spectra-Physics, a leading laser manufacturer, which will assist in testing the resulting crystals, allowing us to accelerate market acceptance.
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