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CMOS-Compatible Nanomanufactured Optoelectronic Integrated Circuits on Silicon

CMOS-Compatible Nanomanufactured Optoelectronic Integrated Circuits on Silicon
CMOS 兼容的纳米硅光电集成电路
批准号:
1335609
负责人:
Constance Chang-Hasnain
金额:
$30.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-10-01 至 2016-09-30

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中文摘要
翻译
该项目的总体目标是通过将III-V化合物纳米柱光电器件集成到硅衬底上,开发可制造的单片集成光电和电子电路。这项研究的目标是:(1)控制硅纳米结构的合成,这样它们就可以通过设计和大规模生产来放置或播种;(2)开发与硅光子学和电子学集成的单片电泵激光器。利用金属有机化学气相沉积合成技术,充分研究纳米柱的生长机理,实现对生长位点、密度、掺杂和异质结构形成的精确控制。异质结构是不同材料的夹心层。在此基础上,设计、制造了具有硅透明发射波长的电泵浦纳米柱激光器,并对其进行了表征。此外,纳米柱激光器将集成到硅波导上,具有高耦合效率,可用于光电应用。波导是引导光或电磁波的结构。这种光电集成电路的发展将以其独特的制造机制弥合III-V半导体平台上的光电器件与硅上集成电路之间的差距。它的成功将为具有成本效益的硅片增加新颖的突破性功能,大大降低了功耗,尺寸和重量。它对我们社会的变革性影响之一可能是将我们的个人手持设备广泛应用于医疗保健、传感、成像和通信领域。此外,该项目将为纳米材料制造带来颠覆性的技术,开发出一种重要的能力,从根本上改变晶格不匹配材料的合成。T匹配。除了主要由研究生进行的研究活动外,该项目还将为高中生和本科生提供跨学科的机会,以获得前沿研究的实践经验。
英文摘要
The overarching goal of this project is to develop manufacturable, monolithic integrated optoelectronic and electronic circuits by integrating III-V compound nanopillar optoelectronic devices onto silicon substrates. The objectives of this research are (1) to control the synthesis of nanostructures on silicon such that they can be placed or seeded by design and scaled for mass production and (2) develop electrically pumped lasers monolithically integrated with silicon photonics and electronics. Using metal-organic chemical vapor deposition synthesis technique, the nanopillar growth mechanism will be fully investigated to achieve precise control of growth sites, density, doping and heterostructure formation. Heterostructures are sandwich layers of different materials. Building upon that, electrically-pumped nanopillar laser with a silicon transparent emission wavelength will be designed, fabricated, and characterized. Furthermore, nanopillar lasers will be integrated onto silicon waveguides with high coupling efficiency for optoelectronic applications. Waveguides are structures that guide light or electromagnetic waves.The development of such optoelectronic integrated circuits will bridge the gap between optoelectronic devices on III-V semiconductor platform and integrated circuits on silicon with a unique manufacturing mechanism. Its success will add novel breakthrough functionalities onto cost-effective silicon wafers with greatly reduced power consumption, size, and weight. One of its transformational impacts on our society could be bringing our personal hand-held devices to a wide spectrum of applications in healthcare, sensing, imaging, and communication. In addition, this project will result in a disruptive technology for nanomaterial manufacturing, developing a major capability that will fundamentally transform the synthesis of lattice-mismatched materials, which are materials whose crystal structures don?t match up. Together with its research activities primarily conducted by graduate students, this project will also offer interdisciplinary opportunities for high school and undergraduate students to gain hands-on experiences in cutting-edge research.
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Ultra-low Energy, Chip-Scale All-Optical Switches Using High-Contrast Grating
  • 批准号:
    1002160
  • 项目类别:
    Standard Grant
  • 资助金额:
    $33.0万
  • 财政年份:
    2010
  • 负责人:
    Constance Chang-Hasnain
  • 依托单位:
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    Standard Grant
  • 资助金额:
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  • 财政年份:
    2007
  • 负责人:
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IGERT: Nanoscale Science and Engineering - From Building Blocks to Functional Systems
  • 批准号:
    0333455
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $380.36万
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    2003
  • 负责人:
    Constance Chang-Hasnain
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Ultra-High-Capacity Optical Communications and Networking: Vertically-Integrated Primitives for a Bufferless, Temporally- and Spectrally-Efficient All-Optical Packet-Switched Netwo
  • 批准号:
    0123512
  • 项目类别:
    Standard Grant
  • 资助金额:
    $46.5万
  • 财政年份:
    2001
  • 负责人:
    Constance Chang-Hasnain
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海外基金