EAGER: Microstructure of Er optical center in the large-bandgap semiconductor GaN

目的：本研究计划旨在对宽禁带半导体氮化镓中铒的光中心有更深入的了解。该方法利用磁光技术来研究这些centers.Intellectual优点的微观结构：所提出的工作涉及的光学活性的Er中心在GaN的微观结构的理论和实验研究将使用磁光测量。本研究将着重探讨磁场强度对氮化镓中铒中心光致发光线的塞曼效应。几种方法结合分析和模拟技术的磁场诱导分裂的光致发光线将被利用。铒的光学中心的基态和激发态的个别g-张量将被确定。这项研究的重点是在高磁场的高，低能量分量的强度比的温度依赖性。更广泛的影响：如果研究成功，将有助于更好地理解GaN半导体薄膜中的铒光学中心。这些信息对于未来的光子/光电应用至关重要，包括光放大器，光通信系统，固态照明设备和量子信息处理系统。这项研究还将影响光子学、材料科学和器件等跨学科领域的研究生和本科生的培养。研究成果将纳入PI在光学和纳米科学课程中提供的课程。

Objective: This research project aims to achieve a greater understanding of erbium optical centers in the wide bandgap semiconductor GaN. The approach utilizes the magneto-optical techniques to study the microscopic structure of these centers.Intellectual Merit: The proposed work involves theoretical and experimental investigations of the microscopic structure of optically active Er centers in GaN will be investigated using magneto-optical measurements. The study will focus on the Zeeman effect on photoluminescence lines associated with erbium centers in GaN as a function of magnetic field strength. Several approaches combining analytical and simulation techniques for the magnetic field-induced splitting of the photoluminescence lines will be utilized. The individual g-tensors of ground and excited states of the erbium optical centers will be determined. The study will focus on the temperature dependence of the intensity ratio of the high and the low energy components at high magnetic fields. The information will provide a detailed description of the microscopic structure of the optical centers.Broader Impact:If successful, the research will lead to a greater understanding of erbium optical centers in GaN semiconductor films. This information is crucial for future photonic/optoelectronic applications, including optical amplifiers, optical communication systems, solid state lighting devices, and quantum information processing systems. The proposed research also impacts training graduate and undergraduate students in interdisciplinary areas of photonics, material science and devices.The research results will be incorporated into courses offered by the PIs in both Optics and Nanoscience programs.