Workshop: 8th IW on Bulk Nitride Semiconductors: Growth Properties and Devices, to be held in Bavaria, Germany, Sept.30-Oct.5, 2013
Workshop: 8th IW on Bulk Nitride Semiconductors: Growth Properties and Devices, to be held in Bavaria, Germany, Sept.30-Oct.5, 2013
批准号:
1358715
负责人:
Daniel Stancil
金额:
$1.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-10-01 至 2016-03-31
中文摘要
项目目标:拟于2013年9月30日至10月5日在德国巴伐利亚州举行的第8届块状氮化物半导体国际研讨会。申请的10,000美元支持将用于为最多10名与会者提供差旅和住宿支持,或以注册费的形式参加会议。智力优势:本次研讨会将汇集专注于开发生长技术并将这些技术应用于生长电子、光电子和光子应用的块状氮化物材料和器件结构的研究人员。主要专家将介绍块状氮化物的生长、性质及其在电子学和光电子学中的应用方面的最新成就。讲习班的具体目标是查明这些领域仍然存在的重大挑战,并促进建立国际合作,共同努力解决这些问题。这次会议为社会各界提供了一个独特的机会,让他们分享令人兴奋的最先进的技术发展,激发新的想法,学习新的挑战和方向,并探索/促进新的合作。广泛的影响:会议的目的是聚集来自学术界、政府和工业界的国际研究人员,介绍和评估用于电子、光电和光子应用的块状氮化物材料和器件结构的最新发展。会议将通过分享成果、方法、激发新想法和启动新的合作来帮助推动该领域的发展。将根据国家科学基金会的资金培养女科学家和年轻研究人员参与工程学,以支付部分旅费和注册费。
英文摘要
Objective: The proposed project is to the 8th International Workshop on Bulk Nitride Semiconductors to be held in Bavaria, Germany, Sept.30 - Oct.5, 2013. The requested support of $10,000 is will be used to provide travel and accommodation support or in the form of registration fees for up to 10 participants in the conference.Intellectual Merit: This Workshop will bring together researchers focused on developing growth technologies and applying these technologies to grow bulk nitride materials and device structures for electronic, optoelectronic and photonic applications. Leading experts will present recent accomplishments in the field of bulk nitride growth, properties and their application in electronics and optoelectronics. The specific goal of the workshop is to identify critical challenges remaining in these fields and to facilitate establishing international collaborations to jointly work on their solutions. This meeting offers a unique opportunity for the community to share the exciting state-of-the-art technological developments, stimulate new ideas, learn new challenges and directions, and explore/promote new collaborations.Broader Impact: The meeting aims to bring together international researchers from academia, government and industry to present and assess the current state-of-the-art of growth of bulk nitride materials and device structures for electronic, optoelectronic and photonic applications. The meeting will help to advance the field through sharing of results, methods, inspiring of new ideas, and initiation of new collaborations. Participation of women scientists and young researchers in engineering will be fostered based on NSF funds to partially cover travel expenses and registration fees.
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