Indirect Excitons
Indirect Excitons
批准号:
1407277
负责人:
Leonid Butov
金额:
$40.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-09-01 至 2017-08-31
中文摘要
该个人研究人员奖支持一个项目,该项目旨在对由薄层半导体构成的结构的基本光学和电学性质进行实验研究。在十亿分之一米的长度尺度上,这种结构的特殊设计允许产生被称为间接激子的新的准粒子。间接激子是独一无二的,因为它们可以冷却到超低温度。此外,间接激子也是独一无二的,因为它们可以像电子设备中的电子一样受到电子控制,并可以发出电子本身无法做到的光学信号。该项目旨在增加我们对超冷间接激子物理的理解。特别是,它将解决间接激子在强磁场中的传输和光学性质。间接激子的特殊参数允许在实验室中实现高磁场状态。通过这项研究获得的理解可能会导致开发利用电学和光学特性的先进器件,即光电子器件的令人兴奋的可能性。参与这个项目的学生有机会对当代物理学的前沿进行探索性研究。该项目的潜在影响是发展凝聚态物理知识,增加对材料光学和电学性质的基本了解。技术摘要该个人研究人员奖支持一个项目,该项目旨在对耦合量子井半导体结构中的冷间接激子进行实验研究。间接激子是由限制在不同量子势垒层中的电子和空穴形成的。由于间接激子的长寿命,它们可以冷却到低于量子简并的温度。这为研究冷激子提供了机会。由于间接激子的寿命较长,在复合之前,它们可以远距离传播。这为研究激子输运提供了机会。此外,间接激子是偶极子,它们的能量可以由电压控制。这为创造间接激子的各种潜在景观并将其用作研究冷激子的工具提供了机会?物质中的冷复合玻色子。研究包括激子在强磁场中的输运和图案的形成。间接激子的特殊参数允许在实验室中实现高磁场状态。这项研究由学生进行,并与教育相结合。该项目的潜在影响是发展凝聚态物理知识,增加对材料光学和电学性质的基本了解。
英文摘要
NON-TECHNICAL ABSTRACTThis individual investigator award supports a project directed towards experimental studies of fundamental optical and electronic properties of structures made of thin layers of semiconductors. A special design of the structures on a length scale of a billionth part of a meter allows the creation of new quasi-particles called indirect excitons. The indirect excitons are unique because they can be cooled down to ultralow temperatures. Furthermore, the indirect excitons are also unique because they can be electronically controlled like electrons in electronic devices and can shine optical signals that electrons cannot do by themselves. The project is directed towards increasing our understanding of the physics of ultracold indirect excitons. In particular it will address the transport and optical properties of the indirect excitons in high magnetic fields. The specific parameters of indirect excitons allow the realization of the high magnetic field regime in the lab. The understanding gained through this research may lead to the exciting possibility of developing advanced devices that make use of electronic as well as optical properties, i.e. optoelectronic devices. The students involved with this project have the opportunity to perform exploratory research on the cutting edge of contemporary physics. The potential impact of the project is in development of knowledge in condensed matter physics and increase of fundamental understanding of the optical and electronic properties of materials.TECHNICAL ABSTRACTThis individual investigator award supports a project directed towards experimental studies of cold indirect excitons in coupled quantum well semiconductor structures. Indirect excitons are formed by electrons and holes confined in different quantum well layers. Due to their long lifetime, indirect excitons can cool below the temperature of quantum degeneracy. This gives an opportunity to study cold excitons. Due to their long lifetime, indirect excitons can travel over large distances before recombination. This gives an opportunity to study exciton transport. Furthermore, indirect excitons are dipoles and their energy can be controlled by voltage. This gives an opportunity to create a variety of potential landscapes for indirect excitons and use them as a tool for studying cold excitons ? cold composite bosons in materials. Studies include exciton transport and pattern formation in high magnetic fields. The specific parameters of indirect excitons allow the realization of the high magnetic field regime in the lab. The research is performed by students and is integrated with education. The potential impact of the project is in development of knowledge in condensed matter physics and increase of fundamental understanding of optical and electronic properties of materials.
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Indirect Excitons
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批准号:1905478
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项目类别:Continuing Grant
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资助金额:$55.0万
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财政年份:2019
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负责人:Leonid Butov
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依托单位:
E2CDA: Type I: Excitonic Devices
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批准号:1640173
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项目类别:Continuing Grant
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资助金额:$174.88万
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财政年份:2016
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负责人:Leonid Butov
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依托单位:
Proposal to Support Participation of Junior Scientists from the US in International School on Physics of Indirect Excitons
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批准号:1444877
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项目类别:Standard Grant
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资助金额:$0.75万
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财政年份:2014
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负责人:Leonid Butov
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依托单位:
Indirect Excitons
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批准号:0907349
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项目类别:Continuing Grant
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资助金额:$50.0万
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财政年份:2009
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负责人:Leonid Butov
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依托单位:
Indirect Excitons in Semiconductor Nanostructures
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批准号:0606543
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项目类别:Standard Grant
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资助金额:$34.5万
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财政年份:2006
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负责人:Leonid Butov
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依托单位:
海外基金