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Development of New Electronic Materials Using High-Throughput Epitaxial Film Growth

Development of New Electronic Materials Using High-Throughput Epitaxial Film Growth
利用高通量外延薄膜生长开发新型电子材料
批准号:
1609355
负责人:
Paul Salvador
金额:
$39.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-07-01 至 2020-06-30

项目摘要

项目成果

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中文摘要
翻译
非技术描述:材料采用不同的结构时,表现出显著不同的性能。许多新材料被预测具有令人兴奋的电子性质,但从未被制造出来。在特定结构中制造材料的努力通常使用试错、低通量工艺,这些工艺阻碍了材料在技术上的发现、开发和最终部署。在这个项目中,正在探索一种新的高通量结构导向制造方法,以制作一系列有望影响能源和信息技术的突破性材料。具体地说,材料的薄层同时沉积在数百到数千个新颖的表面上,并且有效地确定了薄层和所有表面之间的结构关系。结构导向表面被量身定做以支持特定的目标材料。利用这种方法,课题组正在建立材料稳定性的科学基础,发现新材料,加快电子材料的开发周期。研究人员正在将研究成果纳入本科生和研究生课程,并开发技术增强的学习工具,以传授基本内容和练习基本技能。具体地说,正在开发网络/应用程序界面,以取代传统的被动教科书体验,以学生的速度移动的交互式学习环境。技术描述:正在使用高通量外延薄膜生长方法来生产全新的电子材料-以前未实现的亚稳定复合氧化物。这种方法被称为组合衬底外延,研究人员正在使用这种方法来研究成百上千种不同表面上的局部外延生长。研究小组准备了他们自己的新型衬底,作为烧结陶瓷的抛光表面,并专门定制它们,以支持预计将展示令人兴奋的电子性能的新材料的制造。采用电子背散射衍射作为高通量局域结构探针,脉冲激光沉积作为材料柔性薄膜生长方法。通过快速探索大面积的外延合成空间,确定了薄膜-衬底结构对之间的优选外延取向,并建立了全面的外延稳定性图,该图绘制了相随工艺条件的函数图。因此,研究小组确定了允许人们在特定晶体结构中外延合成给定成分的衬底和生长条件。该项目正在建立外延稳定的经验科学基础,这使得材料的发现和技术的部署得以加速。研究人员的目标是发现几种特定的突破性化合物,预计它们是令人兴奋的电极、铁电体和多铁体。
英文摘要
Non-technical Description: Materials show remarkably different properties when they adopt different structures. Many new materials are predicted to have exciting electronic properties, but have never been made. Efforts to fabricate materials in specific structures generally use trial-and-error, low-throughput processes that inhibit the discovery, development, and ultimate deployment of materials in technology. In this project, a novel high-throughput structure-directing fabrication method is being explored to make a short list of breakthrough materials expected to impact energy and information technologies. Specifically, thin layers of a material are deposited simultaneously on hundreds to thousands of novel surfaces, and the structural relationships between the thin layers and all surfaces are efficiently determined. The structure-directing surfaces are tailored to favor specific target materials. Using this method, the research team is establishing the scientific underpinnings of materials stability, discovering new materials, and accelerating the development cycle of electronic materials. The investigators are incorporating research outcomes in undergraduate and graduate courses and developing technology enhanced learning tools for delivery of primary content and practice of essential skills. Specifically, a web/app interface is being developed to replace the traditional passive textbook experience with an interactive learning environment moving at the student's pace.Technical Description: A high-throughput epitaxial film growth methodology is being used to produce entirely new electronic materials - previously unrealized, metastable complex oxides. The method is called combinatorial substrate epitaxy, and investigators are using this to study local epitaxial growth on hundreds to thousands of different kinds of surfaces. The research team prepares their own novel substrates as polished surfaces of sintered ceramics and specifically tailor them to support the fabrication of new materials predicted to exhibit exciting electronic properties. Electron backscatter diffraction is used as a high-throughput local structural probe and pulsed laser deposition as a material flexible film growth method. By exploring rapidly large regions of epitaxial synthesis space, the preferred epitaxial orientations between film-substrate structural pairs are determined and comprehensive epitaxial stability maps that plot phase as a function of processing conditions are established. The research team thus identifies the substrates and growth conditions that allow one to synthesize epitaxially a given composition in a specific crystal structure. The project is establishing the empirical scientific underpinnings of epitaxial stabilization, which enables the accelerated discovery of materials and their deployment in technologies. The investigators target the discovery of several specific breakthrough compounds expected to be exciting electrodes, ferroelectrics, and multiferroics.
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