2016 International Workshop on Nitride Semiconductors (IWN 2016). To be held October 2-7, 2016 at the Hilton Orlando, Buena Vista Hotel in Orlando, Florida,

拟议的项目寻求财政支持的研究生谁将参加他们的第一次全国会议，年轻的教师谁将给予口头报告，以及那些谁属于代表性不足的群体参加将于2016年10月2日至7日在希尔顿奥兰多，布埃纳维斯塔酒店在奥兰多，佛罗里达，讲习班将为从事第三、第四、第五、第六、第六、第七、第八、第九、第九氮化物半导体材料与器件这门课将讨论大量的主题，重点是生长、器件、缺陷和新材料与器件的概念。研讨会将包括20个特邀讲座和海报会议。将有三个短期课程，还计划了一个剩余课程。这些课程将涉及GaN相关材料的X射线衍射;应用于LED和HEMT的GaN硅基生长;以及GaN LED和HEMT的模拟和建模。本次研讨会的时机非常适合这一代学生学习半导体新科学和技术的发展。它将帮助学生和其他年轻科学家发展氮化物半导体研究的多学科理解。

The proposed project seeks financial support for graduate students who will attend their first national meeting, young faculty who will give oral presentation, and those who belong to the underrepresented groups to attend a Workshop that will be held October 2-7, 2016 at the Hilton Orlando, Buena Vista Hotel in Orlando, Florida, The Workshop will allow to promote science by providing a forum for exchange of knowledge among scientists and engineers working in the field of III-nitride semiconductor materials and devices It will address a large variety of topics with emphasis on growth, devices, defects and new material and device concepts. The workshop will include 20 invited talks and poster sessions. There will be three short courses and a rump session has also been planned. The courses will be on X-ray diffraction of GaN-related materials; Growth of GaN-on-Silicon applied to LED and HEMTs; and Simulation and modeling of GaN LEDs and HEMTs. The timing of this workshop is perfect for this generation of students to learn how the new science and technology of semiconductors is developing. It will help students and other young scientists to develop a multidisciplinary understanding of nitride semiconductor research.