CAREER: Terahertz Electronics based on Nitride Nanowire Transistors

职业：基于氮化物纳米线晶体管的太赫兹电子

• 批准号: 0846628
• 负责人: Tomas Palacios
• 金额: $ 40万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0846628&HistoricalAwards=false
• 关键词: CAREER; Terahertz; Electronics; based; Nitride

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).The objective of this research is to push the limits of electronics to THz frequencies and to increase society?s awareness to the new possibilities offered by the combination of electronics and nanotechnology. The approach is based on demonstrating the superior performance of nitride nanowire transistors and on identifying the best methods for circuit-level integration of these new devices. This research will enable the basic building blocks required for the development of ultra-broadband wireless communication, advanced imaging and radar, electronic THz spectroscopy and THz digital computation.The intellectual merit of the proposed program lies in maximally leveraging the flexibility and unique properties of nitride semiconductors, with advanced processing technologies and high frequency analysis and modeling. Through this interdisciplinary approach, which combines electrical engineering, materials science and semiconductor physics, this project will demonstrate new breakthroughs that will push the limits of high frequency electronic performance beyond the THz barrier. The broader impact of this work is to increase society's awareness of some of the most exciting new challenges in electrical engineering. This effort will be highly integrated with the proposed research through numerous outreach activities, including student education (with special emphasis on underrepresented students), development of teaching modules for K-12 education in collaboration with high school teachers, dissemination of research results through the internet and virtual labs, and collaboration with the electronics industry to transfer the proposed research to commercial applications.

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。这项研究的目的是将电子产品的极限推到太赫兹频率，并增加社会？我们意识到电子学和纳米技术结合所带来的新可能性。该方法是基于证明氮化纳米线晶体管的优越性能和确定这些新器件的电路级集成的最佳方法。这项研究将使开发超宽带无线通信、先进成像和雷达、电子太赫兹光谱和太赫兹数字计算所需的基本构建模块成为可能。该方案的智力优势在于最大限度地利用氮化半导体的灵活性和独特特性，采用先进的处理技术和高频分析和建模。通过这种跨学科的方法，结合了电气工程，材料科学和半导体物理，该项目将展示新的突破，将推动高频电子性能超越太赫兹屏障的极限。这项工作的更广泛的影响是提高社会对电气工程中一些最令人兴奋的新挑战的认识。这项工作将通过许多外展活动与拟议的研究高度结合，包括学生教育（特别强调代表性不足的学生），与高中教师合作开发K-12教育教学模块，通过互联网和虚拟实验室传播研究成果，以及与电子行业合作将拟议的研究转化为商业应用。