SBIR Phase I: Novel Semiconductor Warpage Measurement Device

这个小企业创新研究（SBIR）第一阶段项目的更广泛的影响/商业潜力是提供一种新的方法来评估IC芯片和电子设备的可靠性。由于电子元件和器件的尺寸缩小和小型化，产品的设计在可靠性和性能方面几乎没有余地，可靠性问题已经成为一个巨大的挑战。必须对可靠性进行评估，以估计其实际的现场寿命；必须对薄弱环节进行评估，以识别潜在的失效风险。这种新颖的方法可以通过增强全场变形的测量输入来指出潜在的设计风险，并且可以更好地理解由于高温下热膨胀系数不匹配而导致的不同材料的相互作用。这项创新将提供详细的信息，以识别潜在的故障风险并改进设计，从而减少电子元件和设备的不成熟故障，为我们的客户创造强大的价值主张。该计划将发展一种测量方法，以同时测量半导体器件的翘曲，热膨胀系数和应变。由于材料的玻璃化状态，在玻璃化转变温度以上的翘曲量和热膨胀系数测量很差。本项目将开发一种新的图像相关技术，通过不同的介质进行精确测量，并改变折射率。这是在高温下通过玻璃观察窗测量IC芯片翘曲和热膨胀系数的关键步骤。通过实验验证了该方法在高温翘曲量和材料热膨胀系数测量中的应用。本课题的目标是将翘曲测量分辨率提高5倍，解决玻璃化转变以上材料热膨胀系数测量问题，同时实现翘曲、热膨胀系数和应变测量。

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is to provide a novel approach to evaluate the reliability of IC chips and electronic devices. Forced by the shrinking size and miniaturization of electronic component and devices, products are being designed with little margin regarding reliability and performance, and the reliability issue has been a great challenge. Reliability must be evaluated to estimate its real field life span, and weak link must be assessed to identify the potential failure risk. This novel approach could indicate the potential design risk through enhanced measurement input for full field deformation and provide better understanding of the interaction of different materials due to coefficient of thermal expansion miss match at elevated temperature. This innovation will provide detailed information to identify potential failure risk and improve design, and therefore reduce immature failure of electronic component and devices, creating a strong value proposition for our customers. The proposed project will develop a measurement approach to achieve simultaneous measurements of warpage, coefficient of thermal expansion and strain on semiconductor devises. Warpage and coefficient of thermal expansion measurement above glass transition temperature are poorly measured due to the glassy state of materials. This project will develop an approach for accurate measurement using a novel image correlation technology through different media with changing indexes of refraction. This is a critical step for measurement of IC chip warpage and coefficient of thermal expansion through a glass viewing window at elevated temperatures. Experiments are proposed to validate the methodology in the application of high temperature warpage and material coefficient of thermal expansion measurement. The goal of this project is to improve warpage measurement resolution by 5 times, and solve material coefficient of thermal expansion measurement issue above glass transition, and realize warpage, coefficient of thermal expansion and strain measurement at the same time.