Quaternary Oxide P-type and Ambipolar Semiconductors for Large-Area CMOS

非技术：低成本、大面积的电子产品代表了未来的大胆愿景。如果电路可以廉价地打印出来，人们就可以像粘贴贴纸一样简单地在普通物体上添加智能设备。为了实现这一愿景，需要高性能、低成本、大面积的薄膜晶体管（TFTs）。为了有效地处理信息，这种电路需要由既能传输空穴又能传输电子的器件组成。这将使互补逻辑电路成为可能。半导体金属氧化物是这些应用中最有前途的材料体系之一。虽然电子传递（n型）金属氧化物在商业上得到了应用，但空穴传递（p型）氧化物却落后了。如果能实现与n型氧化物性能相当的p型氧化物，那么无处不在、低成本、大面积电子产品的前景将向现实迈出重要的一步。在提出的研究计划中，作者将提出一个独特的，很少被研究的p型和双极性金属氧化物半导体家族。由四种不同元素组成的新型半导体将被合成并形成薄膜。研究这些四元氧化物的电子和结构特性，并制作基于这些材料的薄膜晶体管。最终目标是演示简单的全氧化物互补电子电路。研究人员将参加俄勒冈科学与工业博物馆科学传播奖学金。这使研究人员能够通过讲座和演示与公众互动。技术：无序金属氧化物半导体具有高电子迁移率，并被商业应用于单极应用，如电视背板。不幸的是，空穴输运（p型）金属氧化物半导体的迁移率仍然比电子输运（n型）材料低大约2个数量级。虽然单极（n型）tft足以用于某些应用，例如有源矩阵显示，但互补（n型和p型）逻辑电路比单极电路提供更大的噪声裕度，并最终获得更高的产量。在本课题的研究中，将提出一个独特的氧化物半导体族，其一般成分为1:1:1:1 MAEO（可以用YZnPO，即M=Y, a =Zn， E=P的成分为例）。这种化合物被认为具有二元氧化物和共价半导体（如磷化锌）的电子特性。该项目的目标是确定具有与非晶态铟镓锌氧化物（IGZO）中电子相当或更大的空穴场效应迁移率的化合物，用于全氧化物互补逻辑电路。该项目将包括鉴定和合成一系列有前途的新MAEO化合物。在优化和研究生长最佳薄膜形态所需的工艺之前，这些化合物将使用非接触式技术以粉末形式进行电子表征。电子设备将作为研究这些材料的工具，并通过广泛的优化，结构来展示高性能的tft原理验证。最后，简单的全氧化物互补光电电路（如逆变器）将展示使用新鉴定的MAEO化合物和适当的n型氧化物半导体材料，如IGZO。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

Nontechnical:Low-cost, large-area electronics represent a bold vision of the future. If circuits could be printed inexpensively, one could add smart devices to normal objects as easily as affixing a sticker. For this vision to be realized, high-performance, low-cost, large-area thin-film transistors (TFTs) are needed. To process information effectively, such circuits need to be formed of devices capable of transporting both holes and electrons. This would enable complementary logic circuits. Semiconducting metal oxides are one of the most promising material systems for these applications. While electron transporting (n-type) metal oxides are used commercially, hole transporting (p-type) oxides have lagged behind. If p-type oxides with comparable performance to their n-type counterparts were realized, the prospect of ubiquitous, low-cost, large area electronics takes a significant step closer to reality. In the proposed program of research, the authors will advance a unique, and seldom-studied, family of p-type and ambipolar metal oxide semiconductors. New semiconductors composed of four different elements will be synthesized and formed into thin films. The electronic and structural properties of these quaternary oxides will be studied, and thin-film transistors based on these materials will be fabricated. The end goal is to demonstrate simple all-oxide complementary electronic circuits. Researchers will participate in the Oregon Museum of Science and Industry Science Communication Fellowship. This enables researchers to interact with the general public through lectures and demonstrations.Technical:Disordered metal oxide semiconductors possess high electron mobilities, and are employed commercially in unipolar applications, such as television backplanes. Unfortunately, the mobility of hole-transporting (p-type) metal oxide semiconductors remains approximately 2 orders of magnitude below than that of electron-transporting (n-type) materials. While unipolar (n-type) TFTs are adequate for certain applications, such as active matrix displays, complementary (n- and p-type) logic circuits provide greater noise-margins, and ultimately greater yield, than unipolar circuits. In this program of research, a unique family of oxide semiconductors of the general composition 1:1:1:1 MAEO (which may be exemplified by the composition YZnPO, i.e. M=Y, A=Zn, and E=P) will be advanced. Such compounds are believed to share the electronic properties of both binary oxides, and covalent semiconductors such as zinc phosphide. The objective of this project is to identify compounds which exhibit hole field effect mobilities comparable to or greater than that of electrons in amorphous indium gallium zinc oxide(IGZO), for use in all-oxide complementary logic circuits. This project will involve the identification and synthesis of a range of promising new MAEO compounds. These compounds will be characterized electronically in powder form, using contactless techniques, before optimizing and studying the processes required to grow optimal thin film morphology. Electronic devices will serve both as a tool to study these materials and, through extensive optimization, structures to demonstrate high-performance proof-of-principle TFTs. Finally, simple all-oxide complementary opto-electronic circuits (such as inverters) will be demonstrated employing newly-identified MAEO compounds, and appropriate n-type oxide semiconductors materials, such as IGZO.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.