Solution-Processed Silicon Thin Films and Electron Devices from Polysilane Precursors

从溶解和配制的聚硅烷前驱体中沉积硅薄膜，并将这些层集成到电子应用中是拟议项目的主要目标。与液相沉积的其他无机材料相比，硅在基本器件参数（如载流子迁移率）、稳定性和可靠性以及材料参数的可控性（如掺杂）方面具有优势。提出的项目的科学挑战是显著提高环硅烷和聚硅烷前驱体溶液的合成可重复性和产率，用于自旋铸造、喷雾铸造或印刷技术，以及硅烷分子的功能。本文提出的一种新方法是合成多功能硅烷分子，在层转化过程中提供原位掺杂或结晶增强的能力，以及将沉积的前驱体薄膜转化为满足印刷电子制造要求的非晶、纳米或多晶硅薄膜。我们将详细研究>的热和光子退火，以减少能量耗散到衬底，使加工适用于技术玻璃或塑料衬底，>利用金属诱导结晶技术，降低薄膜加工的总体热预算。金属诱导结晶应用于聚硅烷前驱体预沉积的非晶态薄膜，以及在分子合成或油墨配制过程中通过掺入活性物质直接集成到前驱体转化中。通过制备单极和双极电子器件，即薄膜晶体管和太阳能电池，证明了非晶和多晶硅薄膜的适用性。因此，该提议的加工活动旨在优化硅薄膜相对于目标器件的电子特性，即缺陷控制、电荷输运以及掺杂。在硅化学（TU BA Freiberg）和设备和工艺技术（FAU Erlangen）领域具有杰出专业知识的两所研究所将在该项目上密切合作。

The deposition of silicon thin films from dissolved and formulated polysilane precursors and the integration of the layers into electronic applications are the main goals of the proposed project.In comparison to other inorganic materials from liquid-phase deposition, silicon is supposed to offer advantages in terms of fundamental device parameters (e.g. carrier mobilities), stability and reliability, as wellas controllability of material parameters (e.g. doping).The scientific challenges of the proposed project are significant improvements in- reproducibility and yield of the synthesis of cyclosilane and polysilane precursor solutions for application in spin casting, spray casting or printing techniques,- the functionality of silane molecules. A novel approach of this proposal is the synthesis of multi-functional silane molecules delivering the capability of in situ doping or crystallization enhancement during layer transformation, as well as- the transformation of the deposited precursor films into amorphous, nano-, or polycrystalline silicon films meeting the requirements of printed electronics manufacturing. In detail we will investigate> thermal and photonic annealing for reduced energy dissipation into the substrate, making the processing suited for technical glasses or plastic substrates,> utilization of metal-induced crystallization techniques lowering the overall thermal budget of thin-film processing. Metal-induced crystallization is applied to pre-deposited amorphous films from polysilane precursors as well as directly integrated into the precursor transformation by incorporation of active species during molecule synthesis or ink formulation.The applicability of the amorphous and polysilicon thin films is demonstrated by preparation of selected unipolar and bipolar electron devices, namely thin-film transistors and solar cells. Consequently, the processing activities of the proposal aim at an optimization of the electronic properties of the silicon thin films with respect to the target devices, i.e. defect control, charge transport, as well as doping.Two institutes with outstanding expertise in the areas of silicon chemistry (TU BA Freiberg) and devices and process technology (FAU Erlangen) will closely cooperate on this project.