Quantum and classical light emitters in silicon: impurities and complex defects for nanophotonics

ULYSSES项目旨在探索一种基于硅基器件中复杂点缺陷的新方法，用于制造明亮的光源。更具体地说，与金刚石中氮空位（NV）中心的惊人发展类似，我们打算研究硅中的G中心，以实现量子光源，激光器和二极管。我们的方法依赖于空间选择性和大面积的杂质注入（如碳离子）在硅基纳米结构（薄板、SiGe基纳米晶体和光子结构），以便制造（i）当使用超高G中心密度时，（在片上和片外光通信的前景中充当经典光源），以及（ii）下至单个G中心，用于硅中的量子光源的演示（在具有光子编码的量子比特的量子信息协议的前景中）。

The ULYSSES project aims at exploring a novel approach based on complex point defects in silicon-based devices for the fabrication of bright light sources. More specifically, in analogy to the phenomenal development of Nitrogen-Vacancy (NV) centers in diamonds, we intend to study G-centers in silicon for the implementation of quantum light sources, lasers and diodes. Our methodology relies on spatially-selective and broad-areas implantation of impurities (such as carbon ions) in silicon-based nanostructures (thin slabs, SiGe-based nanocrystals, and photonic structures) in order to fabricate (i) bright emitters such as LEDs and lasers when ultra-high G-centers densities are used (acting as classical light sources in the prospect of on-chip and out-of chip optical communications), and (ii) down to a single G-center for the demonstration of a quantum light source in silicon (in the prospect of quantum information protocols with photon-encoded quantum bits).