Long-lasting synaptic plasticity subjected to the stochastic principle

我们提出了两种新的突触可塑性现象，可以作为分析记忆巩固的细胞机制的模型。它们分别是：上升(LTP诱导3次后持续突触增强，新的突触形成支持)和丢失(LTD重复诱导3次后突触减弱，突触消除支持)。在本研究中，我们证明了RISE的发展经历了以下几个阶段：a)突触处于持续的生成和回缩状态；b)生成和回缩的速率在产生RISE的刺激后短暂增加；c)回缩速率比生成速率早回到基础水平，导致突触密度的净增加。然而，损失的发展没有b的阶段。这两种表面上对称的现象在发展过程中实际上是不对称的。

We have proposed that 2 novel synaptic plasticity phenomena in the stable cultures of hippocampal slice should serve as suitable models for the analyses of cellular mechanisms underlying memory consolidation. Those are RISE (long-lasting synaptic enhancement after 3 repeated inductions of LTP supported by new synapse formation) and LOSS (long-lasting synaptic weakening after 3 repeated inductions of LTD supported by synapse elimination). In the present study we demonstrated that RISE develops through the following phases: a) the synapses are under constant generation and retraction; b) both the rates of generation and retraction increase transiently after a RISE-producing stimulus, c) the retraction rate returns to the basal level earlier than the generation rate, leading to a net increase in synapse density. However, LOSS develops without the phase of b. The 2 apparently symmetric phenomena are in fact asymmetric in the process of development.