Fabrication and electronic-structure analysis of topological nano-ribbon

尽管人们付出了巨大的努力来寻找携带自旋螺旋狄拉克费米子的新的拓扑材料，但用角度分辨光电子能谱观察拓扑绝缘体的表面态，发现的大多是三维材料。虽然二维拓扑系统在理论上被提出用于几种薄膜系统，但由于观察一维边缘状态的困难，这种材料的实现被限制在极少数系统中。在这个研究项目中，我们对几种拓扑绝缘体和薄膜系统进行了高分辨率的自旋分辨ARPES，以阐明在具有非平凡拓扑性质的纳米带结构上可能出现的预期的一维边缘状态。我们已经成功地测定了几种拓扑绝缘体及相关材料的体电子结构和表面/边缘电子结构。

Despite of a huge effort for searching new topological materials carrying spin-helical Dirac fermions, mostly discovered are 3D materials by observing the surface state of topological insulator with angle-resolved photoemission spectroscopy. While the 2D topological system was theoretically proposed for several thin-film systems, a realization of such materials has been limited to very few systems mainly due to the difficulty in observing 1D edge state. In this research project, we have performed high-resolution spin-resolved ARPES on several topological insulators and thin film systems in order to elucidate the expected 1D-edge state which would emerge on nano-ribbon structure with a non-trivial topological nature. We have successfully determined bulk and surface/edge electronic structure in several topological insulators and related materials.