Temperature independent SiC photodetector operating up to 500 degreeC

电厂和化工厂的监控系统需要工作温度高达500℃的紫外光探测器。这种光电探测器也有望用于汽车或航空航天领域的发动机燃烧监测。目前主要应用于电子学领域的硅(Si)，由于其禁带宽度仅为1.12 eV，不能在200℃以上的温度下工作。宽禁带半导体碳化硅(4H-SIC)是一种很有前途的光电探测器候选材料。在本研究中，我们研究了碳化硅的光学性质，这是器件设计所必需的。我们还找到了有效的抑制漏电流的方法，从而降低了光电探测器的灵敏度。基于这些结果，我们成功地演示了碳化硅光电探测器在500℃下的工作。

Ultra-violet photo detectors which can be operated up to 500 degreeC are needed for monitoring system of power plant and chemical plant. Such photo detectors are also expected to be used in engine combustion monitoring for automotive or aerospace field. Silicon (Si) which is mainly used in nowadays electronics cannot be operated at over 200 degreeC due to its small energy bandgap of 1.12 eV. Wide-bandgap semiconductor, silicon carbide (4H-SiC) is promising candidate for such photo detectors. In this study, we investigated optical properties of SiC, which are required for device design. We also found effective suppression method of leakage current which degrades sensitivity of photo detector. Based on these results, we successfully demonstrated operation of SiC photo detectors at 500 degree C.