Resolution and throughput scalability limits of a compact EUV nanopatterning tool - Erkenntnistransfer-Projekt

这项计划中的工作是基于DFG项目“利用极端紫外光干涉光刻和分子束外延技术实现人工三维Ge量子点晶体”。其中，以实验室为基础的利用极紫外光辐射形成纳米结构的实验装置是拟议的知识转移项目的基础。该设置目前允许在几平方毫米的大面积上以28 nm的最小半间距对周期性结构进行图案化。据我们所知，这是用实验室干涉光刻获得的最高密度图案。这一非凡的科学成就引起了业界对这项技术的兴趣。结合联合工作计划与行业合作伙伴进行的知识转移将使构图方法和高精度系统技术得到进一步发展。目标是实现10纳米半间距的最小特征尺寸，以满足潜在客户在初步查询中的要求。只有在加强透射式掩模技术、定位系统的稳定性和准确性以及设计高效照明系统方面进行广泛的工作，才有可能实现这一目标。联合工作计划将允许确定该方法的科学和技术限制，并确定新的应用领域。根据该项目的结果，该工业合作伙伴将有资格制造市场上可用的EUV纳米工具。

The planned work is based on the DFG project "Realisation of artificial three-dimensional Ge-quantum dot crystals by extreme ultraviolet interference lithography and molecular-beam epitaxy". Therein developed experimental setup for laboratory-based nanostructuring with EUV radiation serves as the basis for the proposed knowledge transfer project. The setup currently allows patterning of periodic structures with a minimal half-pitch of 28 nm over large areas of several square millimeters. To the best of our knowledge this is the highest density pattern ever achieved with a laboratory interference lithography. This remarkable scientific achievement resulted in an industrial interest in this technology. The knowledge transfer in combination with the joint work program together with the industrial partner will enable further development of the patterning method and high-precision system technology. The aim is to realize minimal feature sizes of 10 nm half-pitch as requested by potential customers in preliminary enquiries. Achieving this goal is only possible by extensive work on the enhancement of the transmission mask technology, the stability and accuracy of the positioning system and the design of a highly effective illumination system.The joint work program will allow to determine the scientific and technical limits of the approach and to identify new application areas. Based on the results of the project the industrial partner will be qualified to fabricate a market-ready EUV nanopatterning tool.