Integrated Transceivers for 5G Mobile Communications in a strained GaN-HEMT Technology

未来的移动通信对无线电前端性能提出了更高的要求。特别是在移动基站方面，需要进一步小型化和降低能耗，同时还需要更高的线性度和带宽。基于GaN的集成电路是这些应用的首选技术，因为它们能够将高功率和低噪声应用相结合。但目前典型的GaN技术已针对经典功率放大应用进行了优化。本项目探讨了关于优化的单芯片无线电前端实现的三个未决问题。首先，研究了GaN HEMT晶体管如何通过对器件沟道施加应变来优化以适应特定的应用。我们的目标是解释哪种菌株产生优化的噪声或开关行为，以及如何在通用芯片上本地实现这一点。这种技术为数字功率放大器提供了新的方法和电路拓扑，这是本项目的第二个重点。同样在Reciver方面，如果HEMT针对低噪声进行了优化，并且坚固耐用的低噪声放大器本身可以保护后续电子设备免受高入射功率的影响，那么低噪声放大器可以从紧张的GaN沟道技术中受益。将这三个主题结合到一个项目中，可以进行全面的调查，并可以实现演示芯片。

Future mobile communications require higher preformance radio frontends. Especially concerning mobile base stations, further miniaturisation and reduction of energy consumption is required together with higher linearity and bandwidth. GaN-based integrated circuits are the technology of choice for these applications due to their capability to combine high-power with low-noise applications. But typical GaN technologies today are optimized for classical power amplification applications. This project approaches three open questions regarding an optimized single-chip radio frontend implementation. First, it is investigated how GaN HEMT transistors can be optimized to a specific application by applying strain to the device‘s channel. The goal is to explain which kind of strain yields optimized noise or switching behavior, and how this could be realized locally on a common chip. Such a technology enables new approaches and circuit topologies for digital power amplifiers, which is the second focus of this project. Also on the reciver side, low noise amplifiers could profit from a strained GaN channel technology, if HEMTs are optimized for low noise and the rugged low-noise amplifier itself protects subsequent electronics against high incident powers. Combining these three topics into one project enables a comprehensive investigation and should enable the realization of a demonstrator chip.