Failure mechanism and reliability of valence change memories (T01*)

在该项目中，将对应用条件下的VCM电池进行统计表征，以识别相关的失效现象。利用KMC、紧凑模型和连续模型进行的模拟研究是对实验工作的补充。目的是通过模拟结果与实验数据的比较，阐明器件失效的物理根源。最终，将制定最大限度地降低故障率的策略。这项工作是与英飞凌科技股份公司作为行业合作伙伴合作完成的。

In the project statistical characterization of VCM cells under applicationonditions will be performed to identify the relevant failure phenomena. Simulation studies using the KMC, compact and continuum models developed in the last period complement the experimental work. The goal is to eluci-date the physical origin of the device failure by comparison of the simulation results and the experimental data. Eventually, strategies to minimize the failure rates will be developed. This work is done in collabora-tion with Infineon Technologies AG as industry Partner.