Multi-chamber electron beam evaporator system with targeted gas supply for the production of electrical contacts and thin functional layers

基于III-V半导体材料的器件的制造需要n掺杂区和p掺杂区的电接触。为了避免电损耗并允许部件的功能，具有欧姆特性的电接触是必要的。这些由电活性金属、粘合促进剂和非常好的电导体的层序列组成。对于n掺杂的砷化物，顺序为Ni / Au / Ge，对于p掺杂的Ge / Pd，对于n掺杂的氮化物，例如Ti / Al / {Pt，Ti，Ni，Mo} / Au，对于p掺杂的氮化物Ni / Au和对于n掺杂的磷化物Ge / Au需要。第一种材料用作掺杂材料，并且由下面的层保护或者由此增加粘附性或导电性。为了使各个层不被氧化或污染并因此失去其性能，层序列必须在UHV条件下沉积。为此，需要一种带锁的UHV多室系统，其中通过电子束装置根据材料的熔点和蒸汽压使各个材料蒸发。通过将工厂扩展到包括其他材料，如Cs，Ge和Si，以及有针对性的气体供应的可能性，工厂的应用范围可以大大扩展，从而服务于其他目的，如。用于光电阴极的负电子亲和势表面、用于氧化物薄膜的氧化物薄膜或基于薄Ge或Si的薄外延薄膜的生产。

The fabrication of devices based on III-V semiconductor materials requires the electrical contacting of n- and p-doped regions. In order to avoid electrical losses and to allow the functioning of the components electrical contacts with ohmic characteristics are necessary. These consist of layer sequences of electrically active metals, adhesion promoters and very good electrical conductors. For n-doped arsenides, the sequence Ni / Au / Ge, for p-doped Ge / Pd, for n-doped nitrides, e.g. Ti / Al / {Pt, Ti, Ni, Mo} / Au, required for p-doped nitrides Ni / Au and for n-doped phosphides Ge / Au. The first material is used as a doping material and is protected by the following layers or increased by this the adhesion or electrical conductivity. So that the individual layers are not oxidized or contaminated and thus lose their properties, it is necessary that the layer sequence is deposited under UHV conditions. For this purpose, a UHV multi-chamber system with lock is necessary in which the individual materials are vaporized depending on their melting point and vapor pressure by means of electron beam arrangement. By expanding the plant to include other materials such as Cs, Ge and Si, as well as the possibility of targeted gas supply, the range of application of the plant can be greatly expanded and thus serve other purposes, such as. Production of negative electron affinity surfaces for photocathodes, thin oxide films for antireflection films, or thin epitaxial films based on thin Ge or Si.