Development of Electron Multiplication Device by Semiconductor Microfabrication Technologies

本文提出了一种利用半导体微加工技术制备硅微通道板（MCP）的新工艺，取代了传统的利用玻璃微血管制备MCP的方法。这种制造方法基于两种主要技术。一种是在硅片上形成微通道的硅蚀刻技术，另一种是在微通道表面沉积电子倍增膜的化学气相沉积技术。硅蚀刻是用（110）硅和KOH溶液进行各向异性化学蚀刻。发现了制作高长宽比（通道长度/通道宽度）大于20的微通道的最佳条件。微通道的尺寸为10微米宽，200至400微米长。以四乙基铅和四乙氧硅为原料，通过气相沉积法制备了铅玻璃电子倍增膜。薄膜中硅和铅的组成比例根据供气源的比例而变化。薄膜的组成、退火和氢脱氧使薄膜的电阻发生了极大的变化。通过控制这些条件，可以获得适合MCP的薄膜电阻。所制得宽高比为17的硅MCP在600V电压下的电子倍增增益为35。

A new fabrication technology of silicon micro channel plate (MCP) by semiconductor microfabrication technologies has been developed instead of conventional MCP using glass micro capillaries. This fabrication method stands on two main technologies. One is silicon etching technique to shape the micro channels on the silicon wafers and another is chemical vapor deposition (CVD) technique to deposit electron multiplication films on the sufaces of the micro channels.The silicon etching is anisotropic chemical etching using (110) silicon and KOH solution. The best ething conditions to make micro channels with a high aspect ratio (channel length / channel width) of more than 20 were discovered. The dimension of the micro channels is 10mum width and 200 to 400mum length.Electron multiplication films are lead glass by CVD using tetra-ethyl lead and silicon tetraethoxide. The composition ratio of silicon and lead in the films changes acording to a ratio of the supplied gas sources. The resistance of the films changes extremely by the film composition, annealing and hydrogen deoxidation. An suitable resistance of the films for the MCP can be performed by controlling these conditions.The fabricated silicon MCP with the aspect ratio of 17 has the electron multiplication gain of 35 at the dynode voltage of 600V.