Study on Functional Surface Modification by Ion Dynamic Mixing Method

通过离子动力混合进行的表面修改是实验性的，在功能氧化物薄膜的形成中，对各种基础材料进行了测试。1）泰坦尼亚薄膜的合成首次使用一种小型冷阴极类型的离子枪进行了测试。光束电流约为0.2 mA，能量约为30 keV。所有的电影都被发现是Tio。我们认为，在本次实验中没有获得TiO_2的原因将从不足的充足离子通量中引入到substrate.2）我们应用了一个bucket-type的multicusp ECR源并成功地获得了一个具有约1 mA当前值的宽氧束的3厘米直径的宽氧束。使用这个源我们可以开发一个紧凑的动态混合系统用于获得各种功能氧化物和/on nitride films.3）有了这个新系统，我们可以使用纯规则--TiO_2型电影，在其他方法中没有使用。该薄膜的结构和组成在细节中研究，我们发现了离子工业在稀土生长中的结晶化效应（110）平面，每原子的能量沉积增加了.4）的Al_2O_3也被削弱了和Al_2O_3薄膜的形成，并且成功地准备了超过2-23 KeV的离子能量的宽范围。而电影水晶化在一束光束能量高于20 keV。Alpha-andgamma-Al_2O_3之间的电影化学键变化与到达率Al/O的变化。准备电影的反射指数约为1.7，与散装Al_2O_3中的一个相似。该electric resistManagement is about 1.6 X10 ^<10>OMEGA · cm and it is high enough for the practical application。

Surface modification by ion dynamic mixing was studied experimentally, in which formation of functional oxide films was examined on various base materials.1)Synthesis of titania films was first examined using a small cold cathode type ion gun. The beam current was about 0.2mA with an energy of about 30keV. All films were found to be TiO. We considered that the reason of not obtaining TiO_2 in this experiment would come from the lack of sufficient ion flux to the substrate.2)We applied a bucket-type multicusp ECR source and succeeded in obtaining a broad oxygen beam of 3cm diameter with a current of about 1mA.Using this source we could develop a compact ion dynamic mixing system for obtaining various functional oxide and/on nitride films.3)With this new system we could obtain pure rutile-type TiO_2 films, which were not observed in other methods. The film structure and composition was studied in detail and we found an ion-induces crystallization effect in the growth of rutile (110) plane with an increase of energy deposition per atom.4)Formation of Al_2O_3 were also undertaken and Al_2O_3 films with stoichiometric composition were successfully prepared over the wide range of the ion energy of 2-23 KeV, and the film crystallization was found at a beam energy higher than 20 keV. The film chemical bond varied between alpha-andgamma-Al_2O_3 with the change in the arrival ratio Al/O. Refractive index of prepared films is about 1.7, which is similar to the one of the bulk Al_2O_3. The electric resistivity is about 1.6X10^<10>OMEGA ・ cm and it is high enough for the practical application.