Formation of Functionally Gradient cBN Films Using Ion Beam
Formation of Functionally Gradient cBN Films Using Ion Beam
批准号:
07555521
负责人:
MIYAKE Shoji
金额:
$1.41万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
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英文摘要
Boron nitride films were prepared by IBAD with N and/or Ar-mixtured ions. The c-BN films with improved tribological properties has been approached by inserting a B-rich buffer layr as a controlled buffer at the interface. Tribological characterization of the buffer layr indicated that the films with higher B/N transport ratio exhibited the simultaneous achievement of the highest adhesion strength tigether with the highest hardness value. The stoicheometric upper layr with high fraction of c-BN phase could be successfully grown on the B-rich layr formed on various substrates including highspeed-tool steel and WC.The insertion of the buffer layr exhibited the significant effect on the reduction of internal stress of the c-BN films and further on the enhancement of the tribological properties to obtain high hardness simultaneously with high adhesion strength. The double-layred BN films exhibited excellent characteristics in anti-corrosion capability, high-temperature phase stability and chemical innertness against various glass at elevated temperatures.
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T.Suzuki,Y.Tanaka,Y.Setsuhara,S.Miyake M.Suzuki and M.Kumagai: "Studies on Buffer Layer for Practical Properties of c-BN Films by IBAD" Proc.4th Int.Symp.on Advanced Mat.(ISAM'97). 141-146 (1997)
T.Suzuki、Y.Tanaka、Y.Setsuhara、S.Miyake M.Suzuki 和 M.Kumagai:“IBAD 对 c-BN 薄膜实用性能的缓冲层的研究”Proc.4th Int.Symp.on Advanced Mat。
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通讯作者:
M.Kumagai,M.Suzuki,T.Suzuki,Y.Tanaka,Y.Setsuhara,S.Miyake,K.Ogata,M.Kohata,K.Higeta,T.Einishi,Y.Suzuki,Y.Shimoitani and Y.Motonami: "PROPERTIES OF DEPTH-PROFILE CONTROLLED BORON NITRIDE FILMS PREPARED BY ION-BEAM ASSISTED DEPOSITION" Nuclear Instruments &
M.Kumagai、M.Suzuki、T.Suzuki、Y.Tanaka、Y.Setsuhara、S.Miyake、K.Ogata、M.Kohata、K.Higeta、T.Einishi、Y.Suzuki、Y.Shimoitani 和 Y.
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Y.Setsuhara, T.Suzuki, Y.Tanaka, and S.Miyake: "Formation of c-BN films with enhanced tribological properties by IBAD" Proc.Int.Symp.on Microwave, Plasma and Thermochemical Processing of Advanced Materials.
Y.Setsuhara、T.Suzuki、Y.Tanaka 和 S.Miyake:“通过 IBAD 形成具有增强摩擦学性能的 c-BN 薄膜”Proc.Int.Symp.on 微波、等离子体和先进材料的热化学加工。
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通讯作者:
Y.Setsuhara, T.Suzuki, Y.Tanaka, S.Miyake, M.Suzuki, M.Kumagai, K.Ogata, M.Kohata, K.Higeta, T.Einishi, Y.Suzuki, Y.Shimoitani and Y.Motonami: "INTERFACIAL STRUCTURE CONTROL OF CUBIC BORON NITRIDE FILMS PREPARED BY ION-BEAM ASSISTED DEPOSITION" Nuclear In
Y.Setsuhara、T.Suzuki、Y.Tanaka、S.Miyake、M.Suzuki、M.Kumagai、K.Ogata、M.Kohata、K.Higeta、T.Einishi、Y.Suzuki、Y.Shimoitani 和 Y.
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Development of sintering and joining processes of high performance ceramics for next generation by using high power millimeter-wave radiation
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批准号:10555249
-
项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.26万
-
财政年份:1998
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负责人:MIYAKE Shoji
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依托单位:
Preparation of Super-Hard Nitride Thin Films for Next Generation by High Density Plasma PVD
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批准号:09480091
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.26万
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财政年份:1997
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负责人:MIYAKE Shoji
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依托单位:
Functional Materials Processing by Electromagnetic Heating
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批准号:07045027
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$2.82万
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财政年份:1995
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负责人:MIYAKE Shoji
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依托单位:
Study on Functional Surface Modification by Ion Dynamic Mixing Method
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批准号:03452263
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.42万
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财政年份:1991
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负责人:MIYAKE Shoji
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依托单位:
海外基金