The Trial Productien Of Bolometer Device For Terahertz Mixer With Niobium Nitride

进行了晶格致冷型热电子测辐射热计的试制，并对实现为太赫兹混频器件进行了研究。对于混频实现的薄膜天线和本振器腔，进行了实验和仿真。用NbN制作了热电子测辐射热计(HEB)测辐射热计装置。它有很好的华盛顿特色。尝试了用光波导法测量100 GHz交流特性。但是，一种元素破裂了，而且它没有达到测量的范围。此外，制作的测辐射热计器件的临界温度较低，人们认为薄膜的质量不好，这对薄膜质量的提高起到了一定的作用。但是，虽然它的目标是使厚度为5 nm的薄膜在10K时的临界温度(T_C)是不能达到的。对改进后的测耳仪混音器的中频进行了改进，并对太赫兹混音器进行了性能评价。微带、缝隙、天线(MSA)制作了安装了超半球透镜的单缝天线的比例尺模型，并进行了指向和阻抗测量。在此基础上，利用电磁分析软件(HFSS)对单缝天线和双缝天线的指向进行了仿真。在此基础上设计了带有超半球透镜的混频支架。流量振荡器(Ffos)用NBN进行了Ffos的试制。它具有NBN/AlN/NBN的SIS结构。临界电流密度(JC)达到10kA/cm2以上，在0.78THz下测得峰值电功率为1.2THz1.2μ。这些实验结果表明，具有高JCNBN/AlN/NBN结的FFOS适用于0.6THz以上的片上本振。

The trial production of lattice cooled hot electron bolometer was done, and the research of searching for realization as THz-Mixer device was done. As for a thin film antenna because of Mixer realization and local oscillator vessel as well, an experiment and simulation were done.1. Hot Electron Bolometer (HEB) Bolometer device was made by using NbN. It got a good D.C. characteristic. 1OOGHz A.C. characteristic measurement by wave guide was tried. But, an element broke, and it didn't reach it for the measurement. Moreover, the critical temperature of made bolometer device was low, and it was understood that the quality of a thin film wasn't good, and did the improvement of the quality of a thin film. But, it couldn't be attained though it aimed at making the critical temperature (Tc) of a thin film of the thickness 5nm at 10K. It proceeds with increase the IF frequency of olometer mixer after a thin film improvement, and wants to do the performance evaluation of THz-Mixer.2. Micro-strip, Slot, Antenna (MSA) The scale model of the single slot antenna which installed hyper hemisphere lens was made, and pointing and the measurement of impedance were done. Furthermore, pointing of the single slot antenna and twin slot antenna was asked by using the electromagnetic analytic software (HFSS) by the simulation. Mixer mount with hyper hemisphere lens was designed by this.3. Flux Flow Oscillator (FFOs) The trial production of FFOs was done by using NbN. It was made with the SIS structure of NbN/AlN/NbN. Critical current density (Jc) realized more than 10kA/cm^2 And, detection did the peak electric power of 1.2 μ W at 0.78THz. These experimental results indicate that FFOs with high-Jc NbN/AlN/NbN junctions are applicable for an on-chip local oscillator above 0.6THz.