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Magnetoresistance in double-layered perovskite-type manganese oxides

Magnetoresistance in double-layered perovskite-type manganese oxides
双层钙钛矿型锰氧化物的磁阻
批准号:
15540331
负责人:
ARIMA Takahisa
金额:
$2.3万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004

项目摘要

项目成果

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中文摘要
翻译
尝试了双钙钛矿结构NdBaMn_2O_6的单晶生长,该结构位于铁磁金属、反铁磁电荷有序绝缘体和反铁磁二维金属之间的多临界点附近。运输测量的孪生单晶显示显着降低尼尔温度约280 K的应用程序的磁场。在c轴方向观察到沿着的巨负磁电阻,在240 K时电阻率降低了1/30.用X射线漫散射研究了A位有序RBaMn 2 O 6体系中上述3个相之间的竞争.拉曼散射光谱也观察到该体系中的电荷/轨道有序效应,其中电荷/轨道有序的MnO 2片沿着c轴的攻击方式与传统的A位无序的钙钛矿锰氧化物(R,A)MnO 3不同。中子衍射的详细研究表明,NdBaMn 2 O 6中的铁磁有序的MnO 2片沿着c轴反铁磁堆叠。晶格参数a和B在低于Neel温度时突然伸长,而c长度收缩。晶格参数的这种异常清楚地表明,x2-y2轨道的铁型有序同时形成在Mn自旋扇区的有序。
英文摘要
Single-crystal growth of double-perovskite NdBaMn2O6, which locates near the multicritical point among ferromagnetic metal, antiferromagnetic charge-ordered insulator, and antiferromagnetic two-dimensional metal, was tried. Transport measurements of twin single crystals show the significant reduction of Neel temperature of about 280 K by application of a magnetic field. Giant negative magnetoresistance along the c axis was observed ; resistivity at 240 K decreases by 1/30.Competing among the abovementioned three phases in the A-site ordered RBaMn2O6 system was investigated by X-ray diffuse scattering. Raman scattering spectroscopy was also performed to observe the effect of charge/orbital ordering in this system, where charge/orbital ordered MnO2 sheets attack along the c axis in a different manner from the conventional A-site-disordered perovskite manganese oxides (R,A)MnO3.Detail study of neutron diffraction in NdBaMn2O6 shows that ferromagnetically ordered MnO2 sheets antiferromagnetically stack along the c-axis. Lattice parameters a and b are suddenly elongated below Neel temperature, while the c length shrinks. This anomaly in lattice parameters clearly demonstrates that the ferro-type ordering of x2-y2 orbitals is formed simultaneously at the ordering of the Mn spin sector.
期刊论文(86)
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科研奖励(0)
会议论文
Magnetization-induced Second-Harmonic Generation in Magnetic Semiconductor (Ga, Mn)As
磁性半导体 (Ga, Mn)As 中磁化引起的二次谐波产生
DOI: --
发表时间: 2004
期刊: J.Phys.Soc.Jpn. 73
影响因子: --
作者: [Y.Ogawa, M.Konoto, D.Akahoshi, T.Arima, J.H.Jung, K.Ishizaka, Y.Kaneko, M.Kubota, Y.H.Matsuda, M.Konoto, A.S.Hamid, Y.Ogawa, 有馬孝尚, D.Higashiyama, Y.Ogawa]
通讯作者: Y.Ogawa
DOI: 10.1103/physrevlett.93.107201
发表时间: 2004-09
期刊: Physical review letters
影响因子: 8.6
作者: [M. Konoto;T. Kohashi;K. Koike;T. Arima;Y. Kaneko;T. Kimura;Y. Tokura]
通讯作者: M. Konoto;T. Kohashi;K. Koike;T. Arima;Y. Kaneko;T. Kimura;Y. Tokura
DOI: 10.1103/physrevb.70.174405
发表时间: 2004-11-01
期刊: PHYSICAL REVIEW B
影响因子: 3.7
作者: [Higashiyama, D, Miyasaka, S, Tokura, Y]
通讯作者: Tokura, Y
DOI: 10.1103/physrevb.68.155102
发表时间: 2003-10
期刊: Physical Review B
影响因子: 3.7
作者: [J. Takahashi;E. Matsubara;T. Arima;E. Hanamura]
通讯作者: J. Takahashi;E. Matsubara;T. Arima;E. Hanamura
共 27 条
    Magnetic shape memory effect based on magnetic-field control of the d orbital degree of freedom
    • 批准号:
      19340089
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.06万
    • 财政年份:
      2007
    • 负责人:
      ARIMA Takahisa
    • 依托单位:
    海外基金