Type-II Based THz Emitters (B12*)

该项目旨在开发基于半导体异质结构的激光驱动的脉冲太赫兹发射器，并探索其潜在的物理机制。我们将通过改变势垒和势垒宽度以及材料组成等结构参数，在信号幅度、带宽和工作频率方面优化第二类结构。这种新的方法有可能导致发射体提供比传统表面发射体更高的太赫兹场。此外，我们将研究外加磁场是否会进一步增加发射的太赫兹幅度。

The project aims at the development of laser driven, pulsed THz emitters based on semiconductor heterostructures as well as the exploration of the underlying physical mechanisms. We will optimise the type-II structures regarding signal amplitude, bandwidth, and operation frequency by changing structural parameters like barrier and well width as well as materials composition. This new approach has the potential to lead to emitters which provide higher THz fields than traditional surface emitters. Furthermore, we will investigate, if an applied magnetic field will increase the emitted THz amplitude even further.