Atomic Engineering of Molybdenum Disulfide for Ultra-Scaled Electronics

该项目旨在通过下一代电子材料的原子级工程来探索器件制造和功能的新方法。随着晶体管向原子尺度收缩，传统的制造方法失效，新出现的量子效应改变了器件的行为。原子薄的二维(2D)晶体是纳米电子学中出现的新一代电子材料。然而，目前在目标的亚10纳米尺度上还没有可靠的制造技术，需要对这些最终很小的设备的操作进行基本的科学调查。该项目计划使用创新的方法来研究原子级电子设备的物理，并为未来的量子电子探索全新的设备概念和功能。

This project aims to explore novel approaches to device fabrication and functionality by atomic-level engineering of next generation electronic materials. As transistors shrink towards the atomic scale, conventional fabrication methods fail and device behaviour is altered by emerging quantum effects. Atomically thin two-dimensional (2D) crystals are emerging as next-generation electronic materials in nanoelectronics. However, no reliable fabrication techniques currently exist at the targeted sub-10-nanometre scale and basic scientific investigation of the operation of these ultimately small devices is needed. The project plans to use innovative approaches to investigate the physics of atomic-scale electronic devices and explore entirely new device concepts and functionalities for future quantum electronics.