Effect of deposition rate on ZnO films made by an atmospheric pressure cold plasma generator
Effect of deposition rate on ZnO films made by an atmospheric pressure cold plasma generator
批准号:
16560285
负责人:
SHIKAMA Tomokazu
金额:
$1.92万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2005
中文摘要
结果表明,采用常压低温等离子体可以在露天条件下制备高质量的氧化锌薄膜。为了提高薄膜沉积速度,对狭缝结构进行了优化,当狭缝数(1mm×20mm)由1个增加到2个时,薄膜沉积区域增大。然而,气流变得不稳定,并且膜的均匀性变差。此外,氧化锌薄膜的粒径为40nm以上的成膜速度提高了约1.3倍。接着,为了在保持膜的均匀性的情况下扩大成膜区域,对锥形的狭缝进行了研究。通过在气体出口侧使用1.6mm宽的锥形狭缝来制备薄膜。在这种情况下,薄膜的沉积区域的宽度与宽度为1mm的狭缝相比仅扩展到约1.1倍。此外, ...更多信息 此外,通过使用将气体出口侧的狭缝宽度扩大至3mm的锥形狭缝来进行膜制造。在这种情况下,薄膜的沉积区域的宽度增加了1.9倍。此外,在所制得的薄膜中,氧化锌薄膜的晶粒尺寸在40nm左右,在任何薄膜的沉积速率范围内。与宽度为1mm的狭缝相比,保持40nm的晶粒尺寸的膜沉积速率变为两倍或更多。但是,在气体出口侧的狭缝宽度变宽时,在制得的膜中,除了取向为(002)的晶体之外,还存在取向为(101)的晶体,因此,狭缝形成为锥形被认为是膜制造的加速中的有效构造。此外,当需要具有良好取向性的膜时,需要进一步检查膜条件等。少
英文摘要
We have shown that the zinc oxide thin film of the high quality can be made by using the atmospheric pressure low temperature plasma to which the thin film preparation can be done by open air. To speed up the film deposition speed, the optimization of the slit configuration was examined.The deposition region has increased when the number of slits (1mm×20mm) is increased from one to two. However, the gas flow becomes unstable, and the uniformity of the film has worsened. Moreover, the deposition speed that the grain size of the zinc oxide thin film becomes 40nm or more has increased by a factor of about 1.3.Next, to expand the film deposition region with the uniformity of the film had been kept, the slit of the taper was examined. The thin film was made by using the slit of the taper of 1.6mm in width on the gas exit side. In this case, the width of deposition region of the thin film has extended only to about 1.1 times compared with the slit of the width of 1mm. Moreover, the depositio … More n speed that the grain size of the zinc oxide thin film becomes 40nm or more has hardly changed.In addition, film production was done by using the slit of the taper that expanded the slit width on the gas exit side up to 3mm. In this case, the width of deposition region of the thin film has increased by a factor of 1.9. In addition, the grain size of the zinc oxide thin film was about 40nm in the range at the made film, deposition rate in any film. The film deposition rate at which the grain size of 40nm was kept became twice or more compared with the slit of the width of 1mm. However, the crystal that was orientated to (101) in addition to the crystal that was orientated to (002) in the made film when the slit width on the gas exit side was widened.Therefore, the slit made a taper has understood it is a effective configuration in the speed-up of film production. Moreover, when the film with good orientation property is needed, it is necessary to examine the film condition etc. further. Less
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