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The generating of a functional film by multiply nitriding of aluminum using the In situ reduction reaction.

The generating of a functional film by multiply nitriding of aluminum using the In situ reduction reaction.
使用原位还原反应通过铝的多重氮化生成功能膜。
批准号:
17560643
负责人:
OKUMIYA Masahiro
金额:
$2.3万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2006

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中文摘要
翻译
铝(Al)作为用于诸如汽车或机器部件的雷电的材料一直受到关注。然而,由于Al的硬度和耐磨性分别低于钢,因此它不适用于滑动部件。在先前的研究中,氮化铝(AlN)层形成在氮气气氛中使用商业纯铝(JIS-A1050)低于铝的熔点在桶,其中松散地填充有平均直径0.1 mm的氧化铝粉末和平均直径0.2 mm的铝镁合金粉末,用于化学和/或物理活化的铝基板表面。本文采用离子渗氮结合滚渗的方法,研究了滚渗过程中AlN层的形成机理,并控制了渗层的硬度。在此期间,在靠近表面的横截面处,通过光学显微镜观察到白色区域,并且还通过Electr观察到镁(Mg)的存在。 ...更多信息 微探针分析仪(EPMA)镁元素在机匣中的渗透和扩散是从充填的铝镁合金粉末中进行的。在此步骤之后,AlN部分地在Al衬底的表面生成,它甚至与衬底表面一起生长。氮化铝层厚度随渗氮时间的增加而增加。部分试样在筒式渗氮后还进行了离子渗氮。在复合工艺中,改性层的厚度小于单独采用滚筒渗氮获得的改性层的厚度。采用φ0.8 mm氧化锆(ZrO 2)丝作为标记,对渗层中的扩散物种进行了识别。用手压机将金属丝压入铝基体表面。氮化后有三种可能的焊线位置。第一,(a)如果氮扩散到氮化物层,则标记线将停留在氮化物表面上,第二,(B)如果Al扩散到氮化物层,则其将在氮化物层和衬底之间徘徊,第三,(c)氮和Al都扩散,则标记线将停留在氮化物层中。通过对氮化前后基体的横截面光学显微镜观察发现,标记物停留在氮化层表面,因此可以看出氮化层是通过氮向氮化层中扩散而生长的。少
英文摘要
An Aluminum (Al) has been interested as a material for lightning such as automotive or machine parts. However, it is not applicable in sliding parts since the hardness and wear resistance of Al are respectively inferior to steel. In previous study, an aluminum nitride (AlN) layer was formed in nitrogen atmosphere using the commercial glade pure Al (JIS-A1050) below the melting point of Al in barrel which was loosely filled with average diameter 0.1 mm alumina powder and average diameter 0.2 mm aluminum-magnesium alloy powder for activating the Al substrate surface chemically and/or physically. In this study, the mechanism of formation of AlN layer in barrel was examined and the hardness of modified layer was controlled using ion nitriding with barrel nitriding.Before the Al is nitrided, the incubation period exists. In this period, at the cross section near the surface the white region is observed by the optical micro scope and also the existence of magnesium (Mg) is observed by Electr … More on Probe Micro Analyzer (EPMA). It seems that Mg is infiltrated and diffused from the filled Al-Mg alloy powder in barrel. After this step, the AlN is partially generated at the surface of Al substrate, it grows even with substrate surface. The AlN layer thickness increases proportionally to the root of nitriding time in barrel. After the barrel nitriding, the ion nitriding was combined for some specimens. In the combined processes, the thickness of the modified layer is less than that obtained by barrel nitriding alone. By choosing the ratio of the barrel nitriding period and the ion nitriding period, the hardness of the modified layer can be controlled in respect.In order to identify the diffusion species in the nitride layer, φ0.8 mm zirconia (ZrO_2) wire was used as a marker. The wire was squeezed into the surface of Al substrate with a hand press. There are three possible wire positions after nitriding. First, (a) if the nitrogen diffuses to the nitride layer, the marker wire will stay on nitride surface, second, (b) if the Al diffuses to the nitride layer, it will wander between the nitride layer and the substrate, third, (c) both nitrogen and Al diffuse then the marker will reside in the nitride layer. By the cross sectional optical micrographs of the substrate before and after nitriding, the marker is stay on the surface of nitride layer, therefore we can see that the nitride layer grows by nitrogen diffusion into the nitride layer. Less
期刊论文(5)
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Nitriding of Aluminum Alloy by Electron Beam Excited Plasma
电子束激发等离子体渗氮铝合金
DOI: --
发表时间: 2006
期刊: Jap.J.Heat Treatment Soc vol.46, No.2
影响因子: --
作者: [M.Okumiya, Y.Tsunekawa, A.Baba, S.Tamura]
通讯作者: S.Tamura
DOI: --
发表时间: 2006
期刊: 熱処理 第46巻,第2号
影响因子: --
作者: [奥宮正洋, 恒川好樹, 馬場昭弘, 田村 賢]
通讯作者: 田村 賢
DOI: --
发表时间: 2006
期刊: Solid State Phenomena 118
影响因子: --
作者: [M.Okumiya, H.Ikeda, Y.Tsunekawa]
通讯作者: Y.Tsunekawa
Fabrication of Highly Adhesive Grits Abrasive Wheels by Electroless Composite Plating with Ultrasonic Vibration
  • 批准号:
    14550715
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.3万
  • 财政年份:
    2002
  • 负责人:
    OKUMIYA Masahiro
  • 依托单位:
Development in novel electroless plating of compositionally graded coating with high deposition rate
  • 批准号:
    11650752
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.3万
  • 财政年份:
    1999
  • 负责人:
    OKUMIYA Masahiro
  • 依托单位:
Research on Incorporation Process by Electromagnetic Melt Stirring Based on Interface Control with Ultrasound
  • 批准号:
    08555180
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 资助金额:
    $12.42万
  • 财政年份:
    1996
  • 负责人:
    OKUMIYA Masahiro
  • 依托单位:
国内基金
海外基金
基于CRISPR Activation转录激活系统的籼稻新型再生因子的挖掘
炎性反应中巨噬细胞激活诱导死亡(activation-induced cell death,AICD)的机理研究
  • 批准号:
    30330260
  • 项目类别:
    重点项目
  • 资助金额:
    105.0万元
  • 批准年份:
    2003
  • 负责人:
    顾军
  • 依托单位: