Graphene atomic film transistor with gate-tunable band-gap

我们在双层石墨烯中实现了实用的宽带隙。差距是由双栅极叠层石墨烯施加的电场引起的。自组装的栅极绝缘体使我们能够施加一个大的电场，提高了带隙。宽带隙允许由双层石墨烯晶体管组成的逻辑门的操作。这些结果预测，石墨烯电子可能会实现为具有原子级薄半导体的新兴晶体管。

We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.