Terahertz Photoelectric Phenomena in Semiconductor Weyl and Kane Fermion Systems

该项目旨在探索红外/太赫兹辐射在半导体Weyl和Kane费米子系统中诱导的高频电子输运，这将揭示新的物理现象，并为研究这些系统中的电荷和自旋输运开辟机会。本项目主要研究体积Te和CdHgTe材料的光电流和光电导率。因此，我们应该深入了解太赫兹场诱导现象的微观机制，并使我们能够发展相应的微观和现象学理论。将特别关注光电和光子阻力效应的相互作用以及磁光电现象，例如回旋加速器共振诱导的光电流和量子磁棘轮效应。我们期望Weyl和Kane准粒子的拓扑相对论性与半导体系统的强光学响应相结合，将使我们能够获得对红外/太赫兹辐射的增强光电响应。计划中的研究服务于探测这些系统中的高频电子传输，量子材料的拓扑结构和对称性，以及这些准粒子的能谱。这将用于表征Weyl和Kane费米子系统。我们的研究为开发新型太赫兹/微波器件提供了科学依据。

The project aims to explore the high-frequency electron transport induced by infrared/terahertz radiation in semiconductor Weyl and Kane fermion systems, which should uncover novel physical phenomena and open up opportunities to study the charge and spin transport in these systems. The project is focused on the study of photocurrent and photoconductivity in bulk Te and CdHgTe materials. As a result, we should get insight into the microscopic mechanisms of THz field-induced phenomena and enable us to develop corresponding microscopic and phenomenological theories. Particular attention will be paid to the interplay of the photogalvanic and photon drag effects as well as to magnetooptoelectronic phenomena, such as e.g. cyclotron resonance-induced photocurrents and quantum magneto-ratchet effect. We expect that the topological relativistic properties of the Weyl and Kane quasiparticles combined with the strong optical response of semiconductor systems will allow us to obtain an enhanced photoelectric response to infrared/terahertz radiation. The planned study serves the probing of high-frequency electron transport in these systems, the topology and symmetry of quantum materials, and the energy spectrum of these quasiparticles. This will be used for characterizing Weyl and Kane fermion systems. Our investigations should provide the scientific basis for novel terahertz/microwave devices.