Chronic Toxicity of Gallium Arsenide and Indium Arsenide Intratracheally Instilled into Hamsters

用叙利亚金黄地鼠作实验，研究了砷化镓（GaAs）、砷化铟（1nAs）和磷化铟（1np）等半导体材料的慢性毒性，包括致瘤性。这3种微粒的特征在于几何平均直径范围为3.2 μ m至3.9 μ m。仓鼠通过每周一次的腹膜内滴注给予含有3.75mgAs（GaAs）、7.5mgAs（InAs）或7.5mgp（InP）的总剂量的每种化合物，持续15周。作为对照，仓鼠仅用载体磷酸盐缓冲液处理。我们已经观察了所有仓鼠约2年。GaAs颗粒可造成较严重的肺损伤，包括肺泡细胞增生和充血出血，与对照组相比生存期明显缩短. InAs组的体重增长率明显低于对照组，但在整个实验期间，InAs组、InP组和对照组的存活率无显著差异。这些颗粒物还可引起严重的肺损伤，包括肺泡蛋白沉积、肺泡细胞增生和肺气肿等肺泡病变.与对照组相比，3组大鼠的肺及其他脏器均未见肿瘤生长.这些半导体材料的颗粒在滴注部位保留在肺部超过7个月，这可能导致慢性肺损伤。

Comparative chronic toxicity, including tumorigenicity, of some semiconducting materials, or gallium arsenide (GaAs), lndium arsenide (1nAs) and indium phosphide (1np) were studied using in Syrian golden hamsters given intermittent intratracheal instillations. These 3 particulates characterized with a geometric mean diameter ranging from 3.2 um to 3.9 um. Hamsters were given each compounds containing a total dose of 3.75 mgAs (GaAs), 7.5 mgAs (lnAs) or 7.5 mgp (InP) by means of intratracheal instillations once a week for 15 weeks. As a control, hamsters were treated with only the vehicle, phosphate buffer solution. We had observed all hamsters for about 2 years.1. GaAs particles produced relatively severe lung damage including alveolar cell hyperplasia and congestion with hemorrhage, and the survival was shortened significantly compared with a control group.2. The InAs group exhibited obviously lower increasing ratio of body weight rather than the control group, but the survival rates were not differed among the InAs, InP and control groups through the experimintal period. These particles also produced severe lung damage including alveolar morbid change like proteinosis, alveolar cell hyperplasia and pulmonary emphysema.3. In these 3 groups, no more tumors were observed in the lungs and the other organs compared with the control.4. These particulates of semiconducting materials retained in the lungs at the site of instillations for more than 7 months, which was likely to cause chronic lung damage.