A Study on Multi-quantum Barriers Utilizing Electron-wave Interference in Semiconductors
A Study on Multi-quantum Barriers Utilizing Electron-wave Interference in Semiconductors
批准号:
03402037
负责人:
IGA Kenichi
金额:
$11.07万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (A)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1992
中文摘要
目前大多数半导体激光器都采用双异质结构(HD)来实现光场约束和载流子约束。为了防止电子漏过p型包层的异质势垒,通常需要超过300 meV的内置电位差。但在某些情况下,如高功率和高温操作,更高的势垒高度是可取的。然而,由于材料的限制,有时无法获得足够的势垒高度,例如,在短波长基于GaAlInP的红橙色激光器和基于II-VI的蓝绿色ZnCdSSe或蓝色ZnMgSSe系统中。为了实现器件的高性能,我们不仅要关注半导体激光器的主动引擎,还要关注包层。提高有效势垒高度的方法之一是对p包层进行高掺杂,另一种方法是利用量子效应,即多量子势垒(MQB)。MQB是一种可以通过干涉反射电子的半导体超晶格。CQB是一种可以通过干涉反射电子的半导体超晶格。本文首先介绍了它的原理和设计思想,然后综述了装载mqb的半导体激光器和隧道二极管的最新进展。结果表明,可见光GaAlInP/GaInP激光器的工作温度可提高20 K。此外,还对长波长激光器进行了一些设计和实验研究。一个有趣的特点是防止螺旋钻热电子通过包层泄漏的可能性。
英文摘要
we use the double heterostructure (HD) in most of current semiconductor lasers for the purpose of confinement of both optical field and carriers as well. In order to prevent electrons from leaking over the hetero-barrier of a p-type cladding, it is known that more than 300 meV of built-in potential difference is usually required. But in some cases such as high power and high temperature operations, much higher barrier height is preferable. However, enough barrier height is not sometimes available due to the material limitation, e.g., in short wavelength GaAlInP based red-orange lasers and II-VI based blue-green ZnCdSSe or blue ZnMgSSe systems.We have to pay attention not only to the active engine of semiconductor lasers, but also to the cladding layer to achieve high performance devices. One of the ways to increase the effective barrier height is to dope high to p-cladding, and another is to use the quantum effect, i.e., multi-quantum barrier (MQB). The MQB is a semiconductor super-lattice which can reflect electrons by interference.The CQB is a semiconductor super-lattice which can reflect electrons by interference. In this paper we first introduce its principle and design concept and then review the recent progress of MQB-loaded semiconductor lasers and tunneling diodes. It has been pointed out that the operating temperature of visible GaAlInP/GaInP lasers, to red, can be raised up by 20 K. Also, some design and experimental studies for long wavelength lasers have been made. One of interesting features is a possibility of preventing the auger hot electron from leaking through the cladding.
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K Iga: "Multiquantum barrier-its design and application to semiconductor lasers" Proc.Conf.Laser and Electro-Optics. CMA1 (1992)
K Iga:“多量子势垒 - 其设计及其在半导体激光器中的应用”Proc.Conf.Laser and Electro-Optics。
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K.Iga: "Multequantum barrier-its design and application to semiconductor Iasers" Proc.Conf.Laser & Electro-Optics. CMA1 (1992)
K.Iga:“多量子势垒 - 其设计及其在半导体激光中的应用”Proc.Conf.Laser
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T.Ucheda,T.K.Ucheda,N.Yokouchi,T.Miyamoto,F.Koyama,K.Iga: "Photoluminescence characterization of Gax In_<1-x> As(0≦x≦0.32)Strained quantum wells grown on InP by chemical beam epitaxy" J.Crystal Growth. 120. 357-361 (1992)
T. Ucheda、T. K. Ucheda、N. Yokouchi、T. Miyamoto、F. Koyama、K. Iga:“Gax In_<1-x> As(0≤x≤0.32)通过化学方法在 InP 上生长的应变量子阱的光致发光表征“束外延”J.Crystal Growth 120. 357-361 (1992)
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T.Takagi,F.Koyama,K.Iga: "Electronーwave reflection by multiーquatum barrier in nーGaAs/GaAs/nーGaAs tunneling diode" Applied Physics Letters. 59. 2877-2879 (1991)
T.Takagi、F.Koyama、K.Iga:“n-GaAs/GaAs/n-GaAs 隧道二极管中多量子势垒的电子波反射”《应用物理快报》59. 2877-2879 (1991)。
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K.Iga: "Microoptics in International Trends in Optics(Chapter4)" Academic Press, 19 (1991)
K.Iga:《国际光学趋势中的微光学(第4章)》学术出版社,19(1991)
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共 24 条
A Study of Parallel Micoroptical System for Image
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财政年份:1994
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负责人:IGA Kenichi
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财政年份:1991
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负责人:IGA Kenichi
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依托单位:
Two-dimensional Array of Planar Microlens and Its Applications for Optical Commponents
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批准号:59850008
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资助金额:$6.59万
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财政年份:1984
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负责人:IGA Kenichi
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依托单位:
海外基金