APPLICATION OF INTERMETALLIC COMPOUNDS TO FUNCTIONAL ELECTRONIC MATERIALS

研制了具有良好热稳定性和光滑表面的耐高温NiGe欧姆接触。为了将这种接触应用于未来的超大规模集成（VLSI）GaAs器件，降低NiGe接触的接触电阻（R_C）是强制性的。本文对NiGe接触的形成机理进行了研究，为降低R_C提供了依据。发现NiGe接触具有两种不同的欧姆接触形成机制。这些机理表明，在GaAs表面和/或Ge层中进行重掺杂对降低NiGe接触的R_C值是非常有效的。

Refractory NiGe Ohmic contacts which had excellent thermal stability and smooth surface had been developed. To apply this contacts to the future very large scale integration (VLSI) GaAs devices, reduction of the contact resistance (R_C) of the NiGe contacts are mandatory. In the present paper, in order to obtain a guideline for the R_C reduction, the formation mechanism of the NiGe contacts was investigated. The NiGe contacts were found to have two different Ohmic contact formation mechanisms. These mechanisms suggested that facilitation of heavy doping at the GaAs surface and/or in the Ge layr was very effective to reduce the R_C values of the NiGe contacts.