Creation and properties of inorganic artificial lattices by Laser MBE.

基于从H.7财年开始的研究，获得了以下结果。人工晶格的生长准则已经扩展到Chalchgenide(硒和碲化物)功能材料。在人工晶格结构中，阐明了结构参数与物理性质之间的关系。在介电人工晶格中，发现了堆积周期、晶格应变和二维排列之间的关系；在导电人工晶格中，区分了阻塞层的周期性和电荷储存层的填充效应的作用。在硫系中，系统地了解了带隙能量与光转换效率之间的关系。

Based on the studies started from H.7 fiscal year, following results were obtained.1. The guide line for the growth of artificial lattices has been extented to the chalchogenides (selenides and tellurides) functional materials.2. In the artificial lattice structures, the relation between structural parameters and physical properties has been elucidated. In the dielectric artificial lattices, the following correlations have been found ; i.e.stacking periodicity, lattice strain and the two dimensional arrangements.In the conductive artificial lattices, the role of the periodicity of blocking layrs and the filling effect of charge reservoir layr was clalified. In the chalcogenide systems, the relation between band gap energies and photo-conversion efficiency were systematically understood.