Tunnel injection of electron into diamond and its application to cold cathode

对金刚石隧道注入电子及其在冷阴极中的应用进行了研究。结果如下所示在假定金刚石中大量掺杂供体杂质，且金刚石中的费米能级位于导带附近的情况下，模拟了金属/金刚石接触过程中的电子注入特性。研究了施主能级对电子发射特性的影响。结果表明，在适当的供体浓度和膜厚条件下，电子能有效地注入金刚石中。通过与金属[2]的电子发射相比较，证明了金刚石冷阴极的优越特性采用化学气相沉积法在（100）取向Si衬底上合成了掺磷金刚石。测量了电阻率的温度依赖性，估计活化能为0.42-0.58eV.[3]采用氧、氢和磷化氢等离子体处理对金刚石进行表面改性。研究了这些样品的电子发射特性。观察到氧等离子体处理和退火后的金刚石样品的电子发射阈值电场增大。

Studies on tunnel injection of electrons into diamond and its application to cold cathode are carried out. The following results are obtained.[1] Electron injection characteristics into diamond are simulated for the metal/diamond contact in which it is assumed that donor impurites are heavily doped in the diamond and the Fermi level in the diamond is located near the conduction band. The effect of the donor level on the electron emission characteristic is examined. It is shown that electrons are efficiently injected into diamond with proper donor concentration and film thickness. A superior characteristic of diamond cold cathod is demonstrated in comparison with electron emission from the metal.[2] Phosphorus-doped diamond is synthesized on (100) -oriented Si substrates by chemical vapor deposition method. A temperature dependence of the electrical resistivity is measured and the activation energy is estimated to be 0.42-0.58eV.[3] Surface modification of diamond is carried out by oxygen, hydrogen and phosphine plasma treatments. Electron emission characterstics are examined for these samples. It is observed that the threshold electric field of the electron emission increases for oxygen-plasma-treated and annealed diamond samples.